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2004年度研究成果
学術論文 / Journal Papers
- K. Fukuda, T. Yoshida, T. Shimura, K. Yasutake, and M. Umeno,
"Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers,"
Jpn. J. Appl. Phys., 43, 1081-1087 (2004).
- K. Yasutake, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yoshii, and Y. Mori,
"Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching,"
Jpn. J. Appl. Phys., 43, L1552-L1554 (2004).
- M. Miyamura, K. Masuzaki, H. Watanabe, N. Ikarashi, and T. Tatsumi,
"Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure,"
Jpn. J. Appl. Phys., 43, 7843-7847 (2004).
- H. Watanabe, M. Saitoh, N. Ikarashi, and T. Tatsumi,
"High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO2 underlayer ,"
Appl. Phys. Lett., 85, (3) 449-451 (2004).
- K. Fukuda, T. Yoshida, T. Shimura, K. Yasutake, and M. Umeno,
"Residual order within thermally grown amorphous SiO2 on crystalline silicon,"
Phys. Rev. B, 69, (8) 085212 (2004).
- T. Shimura, K. Fukuda, K. Yasutake, and M. Umeno,
"Characterization of SOI wafers by synchrotron X-ray topography,"
Eur. Phys. J. Appl. Phys., 27, 439-442 (2004).
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国際会議/ International Conferences
- K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi and Y. Mochiznki,
"Dual Workfunction Ni-Silicide/HfSiON Gate Stacks by Phase-Controlled Full-Silicidation (PC-FUS1)'TechniqUe for 45nm-node LSTP and LOP Devices,"
2004 IEEE International Electron Devices Meeting (IEDM), 7.4,
(San Francisco, CA, USA, December 13-15, 2004).
- N. Umezawa, K. Shiraishi, T. Ohno1, H. Watanabe, T. Chikow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima and T. Arikado,
"Intrinsic Effect of a Nitrogen Atom for Reduction in Leakage Current through Hf-based High-k Gate Dielectrics - Nitrogen Induced Atomistic Cutoff of “O Vacancy Mediated Leakage Paths","
The 35th IEEE Semiconductor Interface Specialists Conference (SISC), Late News Poster #2,
(San Diego, CA, USA, December 9-11, 2004).
- T. Shimura, E. Mishima, K. Fukuda, K. Yasutake, and M. Umeno,
"Development of characterization technique of SOI wafers by synchrotron X-ray topography,"
The 4th International Symposium on Advanced Science and Technology of Silicon Materials, K-5,
(Kailua-Kona, HI, USA, November 22-26, 2004).
- M. Saitoh, N. Ikarashi, H. Watanabe, S. Fujieda, H. Watanabe, T. Iwamoto, A. Morioka, T. Ogura, M. Terai, and K. Watanabe,,
"1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs,"
2004 International Conference on Solid State Devices and Materials (SSDM 2004), pp.38-39, B-1-5,
(Tower Hall Funabori, Tokyo, Japan, September 15-17, 2004).
- K. Takahashi, K. Manabe, A. Morioka, T. Ikarashi, T. Yoshihara, H. Watanabe, and T. Tatsumi,
"High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics,"
2004 International Conference on Solid State Devices and Materials (SSDM 2004), pp.22-23, A-2-3,
(Tower Hall Funabori, Tokyo, Japan, September 15-17, 2004).
- K. Manabe, K. Takahashi, T. Ikarashi, A. Morioka, H. Watanabe, T. Yoshihara and T. Tatsumi,
"Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application,"
2004 International Conference on Solid State Devices and Materials (SSDM 2004), pp.18-19, A-2-1,
(Tower Hall Funabori, Tokyo, Japan, September 15-17, 2004).
- Y. Yasuda, N. Kimizuka, T. Iwamoto, S. Fujieda, T. Ogura, H. Watanabe, T. Tatsumi, I. Yamamoto, K. Ita, H. Watanabe, Y. Yamagata, and K. Imai,
"A 65nm-node LSTP (Low Standby Power) Poly-Si/a-Si/HfSiON Transistor with High Ion-Istandby Ratio and Reliability,"
2004 Symposia on VLSI Technology and Circuits, pp.40-41,
(Honolulu, HI, USA, June 15-19, 2004).
- M. Miyamura, M. Masuzaki, H. Watanabe, N. Ikarashi, and T. Tatsumi,
"Origin of Flatband Voltage Shift in Poly-Si/Hf-based High-k Gate Dielectrics and Vfb Dependence on Gate Stack Structure,"
The 2004 International workshop on "Dielectric Thin Films for Future ULSI Devices: Science and Technology" (IWDTF-04), Session 1,
(National Museum of Emerging Science and Innovation (Miraikan), Tokyo, Japan, May 24-28, 2004).
- K. Tatsumura, T. Watanabe, I. Ohdomari, T. Chikyow, T. Shimura, M. Umeno,
"Residual Order within Thermally Grown SiO2 on Si(113) Substrate,"
The 2004 International workshop on "Dielectric Thin Films for Future ULSI Devices: Science and Technology" (IWDTF-04), Session 5,
(National Museum of Emerging Science and Innovation (Miraikan), Tokyo, Japan, May 24-28, 2004).
- H. Watanabe, M. Saitoh, N. Ikarashi, and T. Tatsumi,
"High Quality HfSixOy Gate Dielectrics Fabricated by Solid Phase Reaction Between Metal Hf and SiO2 Underlayer
2004 MRS Spring Meeting, D7.7,
(San Francisco, CA, USA, April 12-16, 2004).
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国内学会 / Domestic Conferences
- 渡部 平司,
"高誘電率 (high-k) 膜形成技術の現状と今後の展望,"
第4回インテリジェント・ナノプロセス研究会, pp.47-55,
(東北大学 流体科学研究所, December 20, 2004).
- 小山 晋、中嶋 大貴、南 綱介、大参 宏昌、渡部 平司、安武 潔、森 勇藏,
"大粒径多結晶Si薄膜作製のためのGe微結晶核を利用した基板表面制御,"
薄膜材料デバイス研究会 第1回研究集会予稿集「TFTのすべて」, PR07, PS11,
(あすなら会議場, 奈良市, November 12-13, 2004).
- 三島 永嗣,志村 考功,安武 潔,梅野 正隆,
"放射光X線トポグラフィによる薄膜SOIウエハの同心円状パターンの解析,"
2004年秋季 第65回応用物理学関係連合講演会予稿集, 3p-P11-6,
(東北学院大学, September 1-4, 2004).
- 清水 教弘,本林 久良,志村 考功,安武 潔,
"1.55μm波長帯フォトディテクター用SGOI 薄膜の開発,"
精密工学会2004年度関西地方定期学術講演会, B-13,
(関西大学, July 27-28, 2004).
- 三島 永嗣,志村 考功,安武 潔,梅野 正隆,
"放射光X線トポグラフィによるSOIウエハの同心円状パターンの解析,"
精密工学会2004年度関西地方定期学術講演会, B-09,
(関西大学, July 27-28, 2004).
- 岡田 茂業,千代丸 誠,吉田 慎一,渡部 平司,安武 潔,遠藤 勝義,
"H2アニールしたn型4H-SiC(0001)表面の観察,"
精密工学会2004年度関西地方定期学術講演会, B-08,
(関西大学, July 27-28, 2004).
- 三島 永嗣,志村 考功,安武 潔,梅野 正隆,
"貼り合わせSOIウエーハの放射光X線トポグラフにおける同心円状パターンII,"
2004年春季 第51回応用物理学関係連合講演会予稿集, 30a-ZG-8,
(東京工科大学, March 28-31, 2004).
- 辰村 光介,渡邉 孝信,志村 考功,梅野 正隆,大泊 巌,
"熱成長SiO2膜に存在する残余秩序の熱履歴依存性,"
2004年春季 第51回応用物理学関係連合講演会予稿集, 28p-C-10,
(東京工科大学, March 28-31, 2004).
解説 / Reviews
- T. Shimura, E. Mishima, K. Yasutake, S. Kimura, and M. Umeno,
"Quasi Phase-contrast Imaging of the Variation in Lattice Spacing of Very Thin Si Layers,"
SPring-8 User Experiment Report, No.13, 2004A,
(November, 2004).
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