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Publications - 2018

Journal Papers

M. Sometani, Y. Katsu, D. Nagai, H. Tsuji, T. Hosoi, T. Shimura, Y. Yonezawa, and H. Watanabe,
"Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling",
Japanese Journal of Applied Physics, 57, (12) pp 120304-1~4(2018).
Kidist Moges, M. Sometani, T. Hosoi, T. Shimura, S. Harada, and H. Watanabe,
"Sub-nanometer-scale depth profiling of nitrogen atoms in SiO₂/4H-SiC structures treated with NO annealing",
Applied Physics Express, 11, (10) pp 101303-1~4(2018).
E. Fujita, M. Sometani, T. Hatakeyama, S. Harada, H. Yano, T. Hosoi, T. Shimura, and H. Watanabe,
"Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements",
AIP Advances, 8, (8) pp 085305-1~6(2018).
T. Hosoi, Y. Katsu, Kidist Moges, D. Nagai, M. Sometani, H. Tsuji, T. Shimura, and H. Watanabe,
"Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O₂/Ar gas mixture and its impact on SiO₂/SiC interface quality",
Applied Physics Express, 11, (9) pp 091301-1~4(2018).
R. Hosono, T. Kawabata, K. Hayashida, T. Kudo, K. Ozaki, N. Teranishi, T. Hatsui, T. Hosoi, H. Watanabe, and T. Shimura,
"Advancement of X-ray radiography using microfocus X-ray source in conjunction with amplitude grating and SOI pixel detector, SOPHIAS",
Optics Express, 26, (16) pp 21044-21053(2018).
H. Tsuji, T. Hosoi, Y. Terao, T. Shimura, and H. Watanabe,
"Improvement of SiO₂/4H-SiC(0001) interface properties by H₂ and Ar mixture gas treatment prior to SiO₂ deposition",
Materials Science Forum, 924, pp 461-464(2018).
T. Yamada, K. Watanabe, M. Nozaki, Hong-An Shih, S. Nakazawa, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, and H. Watanabe,
"Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment",
Japanese Journal of Applied Physics, 57, (6S3) pp 06KA07-1~6(2018).
M. Nozaki, K. Watanabe, T. Yamada, Hong-An Shih, S. Nakazawa, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, and H. Watanabe,
"Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties",
Japanese Journal of Applied Physics, 57, (6S3) pp 06KA02-1~7(2018).
K. Watanabe, D. Terashima, M. Nozaki, T. Yamada, S. Nakazawa, M. Ishida, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, and H. Watanabe,
"SiO₂/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors",
Japanese Journal of Applied Physics, 57, (6S3) pp 06KA03-1~6(2018).
E. Kojima, K. Chokawa, H. Shirakawa, M. Araidai, T. Hosoi, H. Watanabe, and K. Shiraishi,
"Effect of incorporation of nitrogen atoms in Al₂O₃ gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge",
Applied Physics Express, 11, (6) pp 061501-1~4(2018).
A. Uedono, T. Yamada, T. Hosoi, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and H. Watanabe,
"Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams",
Appl. Phys. Lett., 112, (18) pp 182103-1~4(2018).
T. Yamada, K. Watanabe, M. Nozaki, H. Yamada, T. Takahashi, M. Shimizu, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe,
"Control of Ga-oxide interlayer growth and Ga diffusion in SiO₂/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability,"
Applied Physics Express, 11, (1) pp 015701-1~4(2018).
H. Oka, T. Tomita, T. Hosoi, T. Shimura, H. Watanabe,
"Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization,"
Applied Physics Express, 11, (1) pp 011304-1~4(2018).

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International Conferences

T. Hosoi, H. Oka, K. Inoue, Y. Wada, T. Shimura, and H. Watanabe,
"High-mobility P- and N-channel GeSn Thin-film Transistors on Transparent Substrate Fabricated by Nucleation-controlled Liquid-phase Crystallization",
SISC2018, 3.3, Dec.6,
(San Diego, U.S.A., December 5-8, 2018).
T. Nagura, K. Chokawa, M. Araidai,T. Hosoi, H. Watanabe, A. Oshiyama, and K. Shiraishi,
"Effect of incorporating Hf atoms in AlON gate dielectrics on hole leakage current",
SISC2018, 3.4, Dec.6,
(San Diego, U.S.A., December 5-8, 2018).
T. Hosoi, K. Watanabe, M. Nozaki, T. Yamada, T. Shimura, and H. Watanabe,
"Mobility enhancement in AlGaN/GaN MOS-HFET with gate recess etching by using AION gate insulator",
IWN2018, ED3-2, Nov.13,
(Kanazawa, Japan, November 11-16, 2018).
T. Yamada, D. Terashima, M. Nozaki, H. Yamada, T. Takahashi, M. Shimizu, A. Yoshigoe, T. Hosoi, T. Shimura, and H. Watanabe,
"Improved reliability of SiO₂/GaN MOS devices by controlling the oxide interlayer",
IWN2018, TuP-ED-4, Nov.13,
(Kanazawa, Japan, November 11-16, 2018).
M. Nozaki, D. Terashima, T. Yamada, A. Yoshigoe, T. Hosoi, T. Shimura, and H. Watanabe,
"Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces",
IWN2018, TuP-ED-3, Nov.13,
(Kanazawa, Japan, November 11-16, 2018).
H. Watanabe, T. Yamada, M. Nozaki, K. Moges, T. Hosoi, and T. Shimura,
"Gate Stack Technology for Advanced GaN and SiC based MOS Devices" (Invited),
ACSIN-14, 22E17, Oct.22,
(Sendai, Japan, October 21-25, 2018).
T. Hosoi, H. Oka, T. Shimura, and H. Watanabe,
"Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization" (Invited),
ACSIN-14, 25D10, Oct.25,
(Sendai, Japan, October 21-25, 2018).
H. Watanabe, T. Yamada, M. Nozaki, T. Hosoi, and T. Shimura,
"Gate Stack Technology for Advanced GaN-Based Mos Devices" (Invited),
AiMES 2018, D01-0712, Oct.2,
(Cancun, Mexico, September 30-October 4, 2018).
H. Watanabe, T. Tomita, H. Oka, K. Inoue, T. Hosoi, and T. Shimura,
"Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy",
AiMES 2018, G03-1057, Oct.2,
(Cancun, Mexico, September 30-October 4, 2018).
Y. Wada, K. Inoue, T. Hosoi, T. Shimura, and H. Watanabe,
"Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization",
SSDM 2018, E-6-04/pp355-356, Sep.12,
(Tokyo, Japan, September 9-13, 2018).
T. Nishimura, H. Nakanishi, I. Kawayama, M. Tonouchi, T. Hosoi, T. Shimura, and H. Watanabe,
"Characterization of SiO₂/SiC interface using a Laser Terahertz Emission Microscope",
SSDM 2018, D-2-06/pp255-256, Sep.11,
(Tokyo, Japan, September 9-13, 2018).
T. Nagura, K. Chokawa, M. Araidai, T. Hosoi, H. Watanabe, A. Oshiyama, and K. Shiraishi,
"First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current",
SSDM 2018, PS-4-20/pp985-986, Sep.13,
(Tokyo, Japan, September 9-13, 2018).
K. Moges, M. Sometani, T. Hosoi, T. Shimura, S. Harada, and H. Watanabe,
"Sub-nm-scale depth profiling of nitrogen in NO- and N₂-annealed SiO₂/4H-SiC(0001) structures",
ECSCRM 2018, TU.01a.03, Sep.4,
(Birmingham, UK, September 2-6, 2018).
H. Takeda, T. Hosoi, T. Shimura, and H. Watanabe,
"Evaluation of the impact of Al atoms on SiO₂/SiC interface property by using 4H-SiC n⁺-channel junctionless MOSFET",
ECSCRM 2018, WE.P.MI5, Sep.5,
(Birmingham, UK, September 2-6, 2018).
M. Sometani, T. Hosoi, T. Hatakeyama, S. Harada, H. Yano, T. Shimura, H. Watanabe, Y. Yonezawa, and H. Okumura,
"Superiority of pure O₂-based gate oxidation on Hall effect mobility of 4H-SiC (0001) MOSFET revealed by low-doped epitaxial wafers",
ECSCRM 2018, WE.02b.05, Sep.5,
(Birmingham, UK, September 2-6, 2018).
T. Umeda, T. Hosoi, T. Okuda, T. Kimoto, M. Sometani, S. Harada, and H. Watanabe,
"Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO₂ interfaces formed by ultrahigh-temperature oxidation",
ECSCRM 2018, TU.03b.01, Sep.4,
(Birmingham, UK, September 2-6, 2018).
S. Nakazawa, Hong-An Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, M. Nozaki, T. Yamada, T. Hosoi, T. Shimura, H. Watanabe, and T. Hashizume,
"GaN-based Metal-Insulator-Semiconductor Transistors on Si for Power Switching Applications"(Invited),
ICMOVPE-XIX, 5B-1.1, Jun.5,
(Nara, Japan, June 3-8, 2018).
H. Watanabe, T. Yamada, M. Nozaki, T. Hosoi, and T. Shimura,
"Gate Stack Technology for Advanced GaN-based MOS Devices"(Invited),
ISPlasma2018, 07pA13I, Mar.7,
(Nagoya, Japan, March 7, 2018).

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Domestic Conferences

山田高寛, 寺島大貴, 野崎幹人, 山田永, 高橋言諸, 清水三聡, 吉越章隆, 細井卓治, 志村考功, 渡部平司,
"GaN導電型がSiO₂/GaN構造のGaOx界面層形成に及ぼす影響",
先進パワー半導体分科会第5回講演会, IIA-20, Nov.7,
(京都テルサ, November 5-7, 2018)
Kidist Moges，染谷満，細井卓治，志村考功，原田信介，渡部平司,
"NO窒化処理を施したSiO₂/SiC界面における窒素原子分布の高精度評価",
先進パワー半導体分科会第5回講演会, IA-20, Nov.6,
(京都テルサ, November 5-7, 2018)
野崎幹人, 寺島大貴, 山田高寛, 吉越章隆, 細井卓治, 志村考功, 渡部平司,
"放射光光電子分光法によるGaN及びAlGaN上のGaOx層の熱脱離過程の比較",
先進パワー半導体分科会第5回講演会, IIB-15, Nov.7,
(京都テルサ, November 5-7, 2018)
染谷満, 細井卓治, 平井悠久, 畠山哲夫, 原田信介, 矢野裕司, 志村考功, 渡部平司, 米澤喜幸, 奥村元,
"超低実効pエピ濃度基板を用いて評価した4H-SiC(0001) MOSFETの反転チャネル電子の散乱要因",
先進パワー半導体分科会第5回講演会, IIA-22, Nov.7,
(京都テルサ, November 5-7, 2018)
武田紘典，染谷満，細井卓治，志村考功，矢野裕司，渡部平司,
"4H-SiC(0001) MOSFETの可動電子密度の温度依存性に基づくチャネル内電子伝導機構の考察",
先進パワー半導体分科会第5回講演会, IA-15, Nov.6,
(京都テルサ, November 5-7, 2018)
大迫桃恵, 細井卓治, 志村考功, 渡部平司,
"SiC MOS界面特性改善に向けた高温CO₂熱処理の検討",
先進パワー半導体分科会第5回講演会, IA-11, Nov.6,
(京都テルサ, November 5-7, 2018)
渡部平司, 山田高寛, 野崎幹人, 細井卓治, 志村考功,
"GaN系パワーデバイス用ゲート絶縁膜技術"（招待講演）,
2018年第79回応用物理学会秋季学術講演会講演予稿集, 20p-CE-8, Sep.20,
(名古屋国際会議場, September 18-21, 2018)
Takuji Hosoi, Kidist Moges, Takayoshi Shimura, and Heiji Watanabe,
"Challenges in SiO₂/SiC interface passivation for SiC power MOSFET"（招待講演）,
2018年第79回応用物理学会秋季学術講演会講演予稿集, 19a-CE-2, Sep.19,
(名古屋国際会議場, September 18-21, 2018)
山田高寛, 寺島大貴, 野崎幹人, 山田永, 高橋言諸, 清水三聡, 吉越章隆, 細井卓治, 志村考功, 渡部平司,
"SiO₂/p-GaN界面の熱酸化過程の放射光XPS分析",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 19p-CE-9, Sep.19,
(名古屋国際会議場, September 18-21, 2018)
山田高寛, 寺島大貴, 野崎幹人, 山田永, 高橋言諸, 清水三聡, 細井卓治, 志村考功, 渡部平司,
"SiO₂/p-GaN MOSキャパシタの電気特性評価",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 19p-CE-10, Sep.19,
(名古屋国際会議場, September 18-21, 2018)
染谷満, 細井卓治, 畠山哲夫, 原田信介, 矢野裕司, 志村考功, 渡部平司, 米澤喜幸, 奥村元,
"低不純物濃度4H-SiC(0001)基板上に作製したMOSFETのホール効果移動度に対するNO-POAの影響",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 20a-141-2, Sep.20,
(名古屋国際会議場, September 18-21, 2018)
藤田栄悟, 細井卓治, 染谷満, 畠山哲夫, 原田信介, 矢野裕司, 志村考功, 渡部平司,
"Ba添加によるSiC MOSFET特性向上の起源の検討",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 20a-141-3, Sep.20,
(名古屋国際会議場, September 18-21, 2018)
和田裕希, 井上慶太郎, 細井卓治, 志村考功, 渡部平司,
"石英基板上GeSn横方向液相成長の徐冷による伸長と低キャリア濃度化",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 18a-235-4, Sep.18,
(名古屋国際会議場, September 18-21, 2018)
西村辰彦, 中西英俊, 川山巌, 斗内政吉, 細井卓治, 志村考功, 渡部平司,
"レーザーテラヘルツエミッション顕微鏡を用いたSiO₂/SiC界面の特性評価",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 20a-141-10, Sep.20,
(名古屋国際会議場, September 18-21, 2018)
名倉拓哉, 長川健太, 洗平昌晃, 細井卓治, 渡部平司, 押山淳, 白石賢二,
"AlONゲート絶縁膜へのHf原子混入効果に関する理論的研究",
2018年第79回応用物理学会秋季学術講演会講演予稿集, 20a-PA5-6, Sep.20,
(名古屋国際会議場, September 18-21, 2018)
細井卓治, 山田高寛, 野崎幹人, 高橋言諸, 山田　永, 清水三聡, 吉越章隆, 志村考功, 渡部平司,
"高性能GaN MOSFET実現に向けたSiO₂/GaN界面制御",
電子情報通信学会シリコン材料・デバイス研究会 (SDM), SDM2018-18/pp. 11-14,
(名古屋大学, June 25, 2018)
中澤敏志, 施泓安, 鶴見直大, 按田義治, 初田次康, 上田哲三, 野﨑幹人, 山田高寛, 細井卓治, 志村考功, 渡部平司, 橋詰保,
"AlON/AlGaN/GaN MIS-HFETによる高速スイッチング動作",
電気学会電子デバイス研究会, EDD-18-032, Mar.26,
(絹の渓谷碧流, 栃木県日光市, March 26-27, 2018)
山田高寛, 寺島大貴, 渡邉健太, 野崎幹人, 山田永, 高橋言諸, 清水三聡, 吉越章隆, 細井卓治, 志村孝功, 渡部平司,
"SiO₂/GaN MOSデバイスの信頼性向上に向けた界面酸化層の制御",
2018年第65回応用物理学会春季学術講演会講演予稿集, 18p-C302-8, Mar.18,
(早稲田大学, March 17-20, 2018)
Kidist Moges Ayele, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada, and Heiji Watanabe,
"XPS study of nitrogen profiles at SiO₂/4H-SiC(0001) interfaces with NO annealing",
2018年第65回応用物理学会春季学術講演会講演予稿集, 20a-D103-11, Mar.20,
(早稲田大学, March 17-20, 2018)
野崎幹人, 寺島大貴, 渡邉健太, 山田高寛, 吉越章隆, 細井卓治, 志村考功, 渡部平司,
"放射光光電子分光法によるGaN上GaOx層の熱脱離過程の評価",
2018年第65回応用物理学会春季学術講演会講演予稿集, 18p-C302-7, Mar.18,
(早稲田大学, March 17-20, 2018)
岡博史, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司,
"レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製",
2018年第65回応用物理学会春季学術講演会講演予稿集, 19a-B201-2, Mar.19,
(早稲田大学, March 17-20, 2018)
岡博史, 細井卓治, 志村考功, 渡部平司,
"裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価",
2018年第65回応用物理学会春季学術講演会講演予稿集, 19a-B201-3, Mar.19,
(早稲田大学, March 17-20, 2018)
渡邉健太, 野崎幹人, 山田高寛, 細井卓治, 志村考功, 渡部平司,
"リセスゲートAlGaN/GaN MOS-HFETへのAlONゲート絶縁膜の導入",
2018年第65回応用物理学会春季学術講演会講演予稿集, 19p-C302-6, Mar.19,
(早稲田大学, March 17-20, 2018)
武田紘典、細井卓治、志村考功、渡部平司,
"SiCジャンクションレスMOSFETによるAl原子がチャネル移動度に与える影響の検証",
2018年第65回応用物理学会春季学術講演会講演予稿集, 20p-D103-6, Mar.20,
(早稲田大学, March 17-20, 2018)
岡　博史, 井上慶太郎, Thi Thuy Nguyen, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司,
"裏面照射型近赤外イメージセンサーに向けた基板上単結晶GeSnフォトダイオードアレイの開発",
映像情報メディア学会情報センシング研究会,
(NHK放送技術研究所 , 東京, March 9, 2018).
H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe,
"High-mobility TFT and enhanced luminescence utilizing ucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic"（依頼講演）,
第17回「関西コロキアム電子デバイスワークショップ」,
(龍谷大学大阪梅田キャンパス , 大阪, January 29, 2018).
細井卓治, 岡博史, 井上慶太郎, 志村考功, 渡部平司,
"石英基板上単結晶GeSn層形成と光電子デバイス応用",
電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）, pp. 151-154, Jan.19,
(東レ総合研修センター, 静岡県三島市, January 18-20, 2018).
冨田崇史, 岡博史, 井上慶太郎, 細井卓治, 志村考功, 渡部平司,
"横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成",
電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）, pp. 9-12, Jan.19,
(東レ総合研修センター, 静岡県三島市, January 18-20, 2018).
施泓安, 中澤敏志, 鶴見直大, 按田義治, 初田次康, 上田哲三, 野﨑幹人, 山田高寛, 細井卓治, 志村考功, 渡部平司, 橋詰保,
"Si基板上MIS型GaNパワーデバイスの開発"（招待講演）,
電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）, pp. 87-90, Jan.20,
(東レ総合研修センター, 静岡県三島市, January 18-20, 2018).

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