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Awards Lists

2019

IWDTF 2019 Young Award
Yuhei Wada (M1)
"Insight into Ga Diffusion in SiO₂ Dielectric Layer and Process Design for Improved Reliability of GaN-based MOS Devices"
November 20, 2019
The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, Research Category
Heiji Watanabe
April 17, 2019
The 24th Workshop on Gate Stack Technology and Physics, Hattori Award
Hironori Takeda (M2)
"Insight into Channel Conduction Mechanism of 4H-SiC(0001) MOSFET Based on Temperature-dependent Hall-effect Measurement,"
January 26, 2019
IEEE EDS Kansai Chapter of the Year Award
Takuji Hosoi
January 24, 2019

2018

The 16th IEEE EDS Japan Chapter Student Award
Hiroshi Oka (D3)
"Enhancement-mode n-channel TFT and Room-temperature Near-infrared Emission Based on n+/p junction in Single-crystalline GeSn on Transparent Substrate,"
February 2, 2018

2017

HSTD11 & SOIPIX2017 Poster Student Award
Ryo Hosono（M2）
"Improvements of Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS"
December 14, 2017
IWDTF 2017 Young Award
Kenta Watanabe (M2)
"SiO₂/AlON Stacked Gate Dielectrics for AlGaN/GaN MOS-HFET"
November 22, 2017
Shimadzu Corporation Best Poster Presentaion Award, 2017 JSPE Autumn Meeting
Ryo Hosono (M2)
"マイクロフォーカスX線源と振幅格子を用いた多波長X線位相イメージング-SOI ピクセル検出器による高度化-,"
September 22, 2017
The 15th APEX/JJAP Editorial Contribution Award
Takuji Hosoi
April 5, 2017
The 15th IEEE EDS Japan Chapter Student Award
Hiroshi Oka (D2)
"High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration,"
February 15, 2017

2016

The 8th JSAP (Autumn, 2016) Poster Award
Takashi Tomita (M1）
September 15, 2016
The 7th JSAP (Spring, 2016) Poster Award
Shingo Ogawa (Toray Research Center）
March 22, 2016
The 21st Workshop on Gate Stack Technology and Physics, Hattori Award
Shogo, Tanaka（M1）
January 25, 2016

2015

The 3rd Meeting of X-Ray and Neutron Phase Imaging with Gratings(XNPIG2015), Best Poster Award
Amane Yamazaki（M2）
September 12, 2015
The 4th Presidential Awards for Achievement in Research, Osaka University
Heiji Watanabe
July 14, 2015
The 4th Presidential Awards for Encouragement in Research, Osaka University
Takuji Hosoi
July 14, 2015
The Incentive Award in the First Half of 2015, AAMT (the Association for the Advancement of Manufacturing and Technology)
Naoki Morimoto (D3)
June 4, 2015

2014

The Award for Encouragement of Research in IUMRS-ICA 2014,
Naoki Morimoto (D2)
"X-ray Phase Contrast Imaging with a Single Grating Talbot-Lau Interferometer,"
October 21, 2014
The 3rd Presidential Awards for Achievement in Research, Osaka University
Heiji Watanabe
July 8, 2014
IEEE EDS Kansai Chapter IMFEDK Student Paper Award
Hiroshi Oka (M2)
"Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices,"
June 20, 2014
The 36th Young Scientist Oral Presentation Award, JSAP
Naoki Morimoto (D2)
"マルチライン状Mo埋め込みターゲットによる位相格子の自己像直接検出とX線位相イメージング,"
May 9, 2014
The 3rd（Spring, 2014）JSAP Poster Award
Shingo Ogawa (D2)
"極薄AlO_x層挿入によるHigh-k/Ge界面反応制御機構の解析,"
March 20, 2014
Best Presentation Award of the International Workshop on Atomically Controlled Fabrication Technology,
Atthawut Chanthaphan (D3)
"Bias-temperature instability of SiC-MOS devices induced by unusual generation of mobile ions in thermal oxides,"
February 6, 2014

2013

The 35th Young Scientist Oral Presentation Award, JSAP
Ryohei Tanaka (B4)
"極薄AlO_x層によるHigh-k/Ge界面反応抑制とEOT=0.56 nmの実現,"
November 19, 2013
The 2nd Presidential Awards for Encouragement in Research, Osaka University
Takuji Hosoi
"超低損失SiCパワーエレクトロニクス実現に向けたゲート絶縁膜技術の研究,"
August 2, 2013
School of Engineering Award 2013, Osaka University
Hiroaki Nishikawa (B4)
March 22, 2013
Young Researcher Award of the 8th Workshop on Gate Stack Technology and Physics
Masahiro Matsue (M1)
"Evaluation of the Carrier Mobility of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy,"
January 26, 2013

2012

The 5th International Symposium on Atomiscally Controlled Fabrication Technology, Best Poster Award
Tatsuya Hashimoto (D3)
"Fabrication and Evaluation of Photoelectronic Devices Integrated with Gold Nanoparticle Plasmon Antenna,"
October 24, 2012
School of Engineering Award 2012, Osaka University
Yuya Minoura (B4)
March 19, 2012
Young Researcher Award of the 7th Workshop on Gate Stack Technology and Physics
Yuichiro Suzuki (M1)
"Evaluation of the Electrical Properties of Single-Crystalline Ge-on-Insulator Structures Formed by Lateral Liquid-Phase Epitaxy,"
January 21, 2012

2011

第20回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会研究奨励賞
Daisuke Ikeguchi (M1)
"紫外線照射による熱酸化 SiO₂/SiC 構造中の電気的欠陥生成,"
December 09, 2011
2011 Osaka University Achievement Awards in Research
Heiji Watanabe
July 19, 2011
2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK2011), Stundent Paper Award
Shimpei Ogiwara（M2）
May 20, 2011
平成22年度公益財団法人矢崎科学技術振興記念財団矢崎学術賞（功績賞）
Heiji Watanabe
"超低消費電力MOSFET用メタルゲート電極形成技術の確立,"
March 10, 2011
第7回日本学士院学術奨励賞
Heiji Watanabe
"半導体表面・界面科学を基軸とした次世代エレクトロニクスの創成,"
March 02, 2011
独立行政法人日本学術振興会（JSPS) 第7回日本学術振興会賞
Heiji Watanabe
"半導体表面・界面科学を基軸とした次世代エレクトロニクスの創成,"
March 02, 2011
Young Researcher Award of the 6th Workshop on Gate Stack Technology and Physics
Shimpei Ogiwara (M1)
"Fabrication of SGOI Structure with High Ge Concentration by Rapid Melt Growth,"
January 22, 2011

2010

The 3rd International Symposium on Atomiscally Controlled Fabrication Technology, Best Poster Award
Hiroaki Arimura (D2)
"Impact of La and A1 Composition Ratio on the Electrical Properties of La-Al-O Higher-k Gate Dielectrics,"
November 26, 2010
Young Researcher Award of the 5th Workshop on Gate Stack Technology and Physics
Katsuhiro Kutsuki (D2)
"Characterization of GeON Dielectrics Fabricated by High-Density Plasma Nitridation of Ultrathin Thermal GeO₂,"
January 23, 2010

2009

The 2nd International Symposium on Atomically Controlled Fabrication Technology, Best Poster Award
Gaku Okamoto (M2)
"Electrical Characteristics of Ge-based MIS Devices with Ge₃N₄ Dielectrics Formed by Plasma,"
November 26, 2009
The 2nd International Symposium on Atomically Controlled Fabrication Technology, Best Poster Award
Katsuhiro Kutsuki (D2 )
"Structural and electrical properties of GeON dielectrics formed by high-density plasma nitridation of ultrathin thermal GeO₂,"
November 26, 2009
The 5th Handai Nanoscience and Nanotechnology International Symposium, Young Researcher Best Poster Award
Chiaki Yoshimoto (M2)
"Fabrication of Ge Nano-Wires on Insulators Using Lateral Liquid-Phase Epitaxy," September 03, 2009
大阪大学工業会賞
Hiroaki Arimura (M2)
"異種元素添加によるHf系高誘電率ゲート絶縁膜の高性能化に関する研究,"
March 24, 2009
Young Researcher Award of the 4th Workshop on Gate Stack Technology and Physics
Tatsuya Hashimoto (M1)
"Fabrication of Ge Wire on Insulator Using Lateral Liquid-Phase Epitaxial Growth,"
January 24, 2009

2008

第17回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会講演奨励賞
Yu Watanabe (M2)
"窒素プラズマ照射および水素ガスアニールによるSiO₂/SiC界面欠陥終端化とその熱劣化過程の評価,"
December 09, 2008
2008 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology (IWDTF2008), Best Poster Award
T. Shimura, Y. Okamoto, T. Inoue, T. Hosoi, and H. Watanabe
"Residual Order in Thermal Oxide of Fully Strained SiGe Alloy on Si,"
November 07, 2008
The 25th Young Scientist Oral Presentation Award, JSAP
Tatsuya Hashimoto（M1）
"液相選択横方向エピタキシャル成長によるLocal GOI構造の作製,"
September 03, 2008
2008 International Meeting for Future of Electron Devices, Kansai (IMFEDK2008), Stundent Award
Yusuke Kagei (M2)
"Improvement of Thermally Grown SiO₂/SiC Interfaces by Plasma,"
May 23, 2008
The 24th Young Scientist Oral Presentation Award, JSAP
Hiroaki Arimura (M1)
"界面特性に優れたsub-1nm EOT TiO₂/HfSiO/SiO₂積層構造ゲート絶縁膜の実現,"
March 30, 2008
Young Researcher Award of the 3rd Workshop on Gate Stack Technology and Physics
Katsuhiro Kutsuki (M2)
"Study on Thermal and Humidity of Ge₃N₄ Thin Layers Fabricated by Plasma Nitridation,"
January 15, 2008
Young Researcher Award of the 3rd Workshop on Gate Stack Technology and Physics
Hiroaki Arimura (M1)
"Achievement of sub-1nm EOT high-k gate dielectrics with TiO₂/HfSiO/SiO₂ layered structure,"
January 15, 2008

2007

The 29th JSAP Paper Award (Year 2007)
Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura "Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning,"
Jpn. J. Appl. Phys. Vol. 45, No. 49, 2006, pp. L1289-L1292,
September 04, 2007

　　　　