Publications

PublicationsAwards Lists

Year：2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004

Publications - 2013

Journal Papers

  1. M. Uenuma, B. Zheng, K. Bundo, M. Horita, Y. Ishikawa, H. Watanabe, I. Yamashita, Y. Uraoka,
    "Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin,"
    J. Crystal Growth, 382, 31-35 (2013).
  2. Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, and H. Watanabe,
    "Design and contro of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics,"
    Appl. Phys. Lett., 103, (3) 033502 (2013).
  3. T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe,
    "Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties,"
    Microelectronic Engineering, 109, 137-141 (2013).
  4. A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe,
    "Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions,"
    Appl. Phys. Lett., 102, (9) 093510 (2013).
  5. T. Hashimoto, Y. Fukunishi, B. Zheng, Y. Uraoka, T. Hosoi, T. Shimura, and H. Watanabe,
    "Electrical detection of surface plasmon resonance phenomena by a photoelectronic device integrated with gold nanoparticle plasmon antenna,"
    Appl. Phys. Lett., 102, (8) 083702 (2013).
  6. H. Watanabe, D. Ikeguchi, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura,
    "Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing,"
    Materials Science Forum,740 - 742, 741-744 (2013).
  7. T. Hosoi, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe,
    "Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates,"
    Materials Science Forum,740 - 742, 605-608 (2013).
  8. M. Fukuta, N. Zettsu, I. Yamashita, Y. Uraoka, and H. Watanabe,
    "The adsorption mechanism of titanium-binding ferritin to amphoteric oxide,"
    Colloid and Surfaces B: Biointerfaces,102, 435-440 (2013).
  9. A. Mura, I. Hideshima, Z. Liu, T. Hosoi, H. Watanabe, and K. Arima,
    "Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2,"
    J. Phys. Chem. C, 117, (1) 165-171 (2013).
  10. T. Shimura, N. Morimoto, S. Fujino, T. Nagatomi, K. Oshima, J. Harada, K. Omote, N. Osaka, T. Hosoi, and H. Watanabe,
    "Hard x-ray phase contrast imaging using a tabletop Talboot-Lau interferometer with multiline embedded x-ray targets,"
    Optics Letters, 38, (2) 157-159 (2013).

PAGE TOP

International Conferences

  1. T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe,
    "High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling Interface Reaction Using Ultrathin AlOx Interlayer,"
    The 44th IEEE Semiconductor Interface Specialists Conference (SISC), 1-2,
    (Arlington, VA, USA, December 5-7, 2013).
  2. M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe,
    "Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy –Material and strain engineering toward CMOS compatible group-Ⅳ photonics-,"
    The 44th IEEE Semiconductor Interface Specialists Conference (SISC), 13-2,
    (Arlington, VA, USA, December 5-7, 2013).
  3. T. Hosoi, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe,
    "Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC," Invited
    The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013), SessionL5, 947,
    (Las Vegas, NV, USA, December 2-6, 2013).
  4. T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe,
    "Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay,"
    Extended Abstracts of 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013), pp.139-140,
    (University of Tsukuba (Tokyo Campus), Japan, November 7-9, 2013).
  5. Y. Minoura, T. Hosoi, J. Matsugaki, S. Kuroki, T. Shimura, and H. Watanabe,
    "Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge,"
    Extended Abstracts of 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013), pp.101-102,
    (University of Tsukuba (Tokyo Campus), Japan, November 7-9, 2013).
  6. T. Hosoi, Y. Uenishi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe,
    "Retarded Oxide Growth on 4H-SiC(0001) Substrates Due to Sacrificial Oxidation,"
    International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), Tu-3B-4,
    (Phoenix Seagaia Resort, Miyazaki, Japan, September 29 - October 4, 2013).
  7. A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe,
    "Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing,"
    International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), Tu-P-39,
    (Phoenix Seagaia Resort, Miyazaki, Japan, September 29 - October 4, 2013).
  8. A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe,
    "Suppression of Mobile Ion Diffusion with AlON/SiO2 Stacked Gate Dielectrics for Improving Bias-Temperature Instability in SiC-MOS Devices,"
    International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), We-P-62,
    (Phoenix Seagaia Resort, Miyazaki, Japan, September 29 - October 4, 2013).
  9. M. Fukuta, B. Zheng, M. Uenuma, I. Yamashita, Y. Uraoka and H. Watanabe,
    "Insight of Selective Adsorption Mechanism of Titanium-binding Peptide,"
    2013 JSAP-MRS Joint Symposia, 19p-PM5-9,
    (Doshisha University, Kyoto, Japan, September 16-20, 2013).
  10. T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe,
    "Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties,"
    The 18th Conference of "Insulating Films on Semiconductors"(INFOS2013),
    (The Jagiellonian University, Cracow, Poland, June 28, 2013).
  11. H. Watanabe,
    "Implementation of High-k Gate Dielectrics in Silicon Carbide Power MOS Devices," Invited
    2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2013), 1A-2,
    (Korea University, Seoul, Korea, June 26, 2013).

PAGE TOP

Domestic Conferences

  1. Heiji Watanabe,
    "Development of Advanced SiC-MOS Power Devices based on Surface and Interface Analysis," Invited
    Reports on Topical Meeting of the Vacuum Society of Japan, 2013-4, pp. 18-23,
    (Kamitsubo Hall, SPring-8, December 26, 2013).
  2. Chanthaphan Atthawut、中野 佑紀、中村 孝、細井 卓治、志村 考功、渡部 平司,
    "AlON/SiO2積層ゲート絶縁膜によるSiC MOSデバイスのBTI特性改善,"
    SiC及び関連半導体研究 第22回講演会, A-23, pp. 96-97,
    (埼玉会館, December 9-10, 2013).
  3. 樋口 直樹、福島 悠太、細井 卓治、志村 考功、渡部 平司,
    "HfO2絶縁膜を用いたSiC-MOS界面設計,"
    SiC及び関連半導体研究 第22回講演会, C-29, p. 242,
    (埼玉会館, December 9-10, 2013).
  4. 有馬 健太，河合 佳枝，箕浦 佑也，川合 健太郎，細井 卓治，渡部 平司，森田 瑞穂，Zhi Liu,
    "湿度制御雰囲気下での吸着水/GeO2/Ge構造のXPS観測,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 18p-D2-2,
    (同志社大学, September 16-20, 2013).
  5. Atthawut Chanthaphan，中野 佑紀，中村 孝，細井 卓治，志村 考功，渡部 平司,
    "Diffusivity of Mobile Ions Inherent to Thermal SiO2/SiC Structures in Deposited SiO2 Gate Dielectrics,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 17a-B3-8,
    (同志社大学, September 16-20, 2013).
  6. 森本 直樹，藤野 翔，大嶋 建一，原田 仁平，細井 卓治，渡部 平司，志村 考功,
    "吸収格子を用いない小型Talbot-Lau干渉計によるX線位相イメージング,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 18p-A13-1,
    (同志社大学, September 16-20, 2013).
  7. 藤野 翔，森本 直樹，大嶋 建一，原田 仁平，細井 卓治，渡部 平司，志村 考功,
    "Talbot-Lau干渉計の光学条件の再検討による測定系の小型化,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 18p-A13-2,
    (同志社大学, September 16-20, 2013).
  8. 松江 将博，安武 裕輔，深津 晋，細井 卓治，志村 考功，渡部 平司,
    "横方向液相成長によって作製したGOI構造のフォトルミネッセンス測定,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 18a-B4-7,
    (同志社大学, September 16-20, 2013).
  9. 箕浦 佑也，細井 卓治，松垣 仁，黒木 伸一郎，志村 考功，渡部 平司,
    "NiGe/Ge接合へのPイオン注入によるショットキーバリア変調,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 20p-B4-7,
    (同志社大学, September 16-20, 2013).
  10. 田中 亮平，秀島 伊織，箕浦 佑也，吉越 章隆，寺岡 有殿，細井 卓治，志村 考功，渡部 平司,
    "極薄AlOx層によるHigh-k/Ge界面反応抑制とEOT=0.56 nmの実現,"
    2013年秋季 第74回応用物理学関係連合講演会予稿集, 17p-B5-17,
    (同志社大学, September 16-20, 2013).
  11. T. Yamamoto, S. Ogawa, T. Hosoi, T. Shimura, and H. Watanabe,
    "Characterization of Interface Structure of Metal Gate / High-k Gate Dielectric,"
    The 77th Symposium on Semiconductors and Integrated Circuits Technology,
    (Tokyo Institute of Technology Tokyo Tech Front, Royal Blue Hall, July 12, 2013).
  12. 渡部 平司,
    "熱酸化SiC-MOS界面物性の理解と制御," Invited
    日本結晶成長学会ナノ構造・エピタキシャル成長分科会主催SiC結晶成長講演会,
    (大阪大学　銀杏会館, June 20, 2013).
  13. H. Watanabe, A. Chanthaphan, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura,
    "Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices," Invited
    IEICE Technical Committee on Silicon Device and Materials (SDM), Silicon Technology No.161, pp. 84-87,
    (The Kikai Shinko Kaikan, Tokyo, June 18, 2013).
  14. Hosoi, S. Azumo, Y. Kashiwagi, S. Hosaka, R. Nakamura, Y. Nakano, H. Asahara, T. Nakamura, T. Kimoto, T. Shimura, H. Watanabe,
    "Implementation of High-k Gate Dielectrics in SiC Power MOSFETT," Invited
    IEICE Technical Committee on Silicon Device and Materials (SDM), Silicon Technology No.161, pp. 74-77,
    (The Kikai Shinko Kaikan, Tokyo, June 18, 2013).
  15. T. Hosoi, I. Hideshima, Y. Minoura, R. Tanaka, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe,
    "Germanide Formation in Metal/High-k/Ge Gate Stacks,"
    IEICE Technical Committee on Silicon Device and Materials (SDM), Silicon Technology No.161, pp. 19-23,
    (The Kikai Shinko Kaikan, Tokyo, June 18, 2013).
  16. 森本 直樹，藤野 翔，大嶋 建一，原田 仁平， 細井 卓治，渡部 平司， 志村 考功,
    "埋め込みX線ターゲットを用いた省電力Talbot-Lau干渉計,"
    2013年度関西地方定期学術講演会,
    (大阪工業大学, June 14, 2013).
  17. 細井 卓治，上西 悠介，箕谷 周平，中野 佑紀，中村 孝，志村 考功，渡部 平司,
    "犠牲酸化処理が熱酸化SiO2/4H-SiC(0001)構造に及ぼす影響,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-G22-1,
    (神奈川工科大学, March 27-30, 2013).
  18. 有馬 健太，村 敦史，秀島 伊織，細井 卓治，渡部 平司，Zhi Liu,
    "in-situ XPSによる湿度制御雰囲気下でのGeO2/Ge構造の観察：Ge3dスペクトル形状の湿度依存性,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-G8-4,
    (神奈川工科大学, March 27-30, 2013).
  19. Atthawut Chanthaphan，箕谷 周平，中野 佑紀，中村 孝，細井 卓治，志村 考功，渡部 平司,
    "Impacts of hydrogen annealing induced mobile ions on thermal SiO2/SiC interface property,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-G22-2,
    (神奈川工科大学, March 27-30, 2013).
  20. 小川 慎吾，秀島 伊織，箕浦 佑也，木村 耕輔，川崎 直彦，安居 麻美，宮田 洋明，山元 隆志，細井 卓治，志村 考功，渡部 平司,
    "球面収差補正（Cs-corrected）STEM-EELSによる金属電極/GeO2絶縁膜界面反応の解析,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-G2-3,
    (神奈川工科大学, March 27-30, 2013).
  21. 秀島 伊織，田中 亮平，箕浦 佑也，吉越 章隆，寺岡 有殿，細井 卓治，志村 考功，渡部 平司,
    "MBD法により作製したMetal/High-k/GeO2/Geスタックの熱処理による構造変化,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-G2-10,
    (神奈川工科大学, March 27-30, 2013).
  22. 森本 直樹，藤野 翔，大嶋 建一，原田 仁平，細井 卓治，渡部 平司，志村 考功,
    "小型X線Talbot-Lau干渉計におけるビジビリティの光源サイズ依存性,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-B1-7,
    (神奈川工科大学, March 27-30, 2013).
  23. 藤野 翔，森本 直樹，大嶋 建一，原田 仁平，細井 卓治，渡部 平司，志村 考功,
    "マルチライン埋め込みX線タ－ゲットの電力負荷試験と小型Talbot-Lau干渉計による短時間X線位相イメージング,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 28p-B1-6,
    (神奈川工科大学, March 27-30, 2013).
  24. 西川 弘晃，鈴木 雄一郎，松江 将博，細井 卓治，志村 考功，渡部 平司,
    "横方向液相成長により作製したGOIバックゲートトランジスタのキャリア移動度評価,"
    2013年春季 第60回応用物理学関係連合講演会予稿集, 27a-G20-9,
    (神奈川工科大学, March 27-30, 2013).
  25. 渡部 平司,
    "先端ゲートスタック開発への放射光光電子分光応用,"依頼講演
    平成24年度文部科学省ナノテクノロジプラットフォーム事業 微細構造解析プラットフォーム 放射光実験設備利用講習会・放射光利用研究セミナー,
    (大阪大学　中之島センター, March 22, 2013).
  26. 細井 卓治, 東雲 秀司, 柏木 勇作, 保坂 重敏, 中村 亮太, 箕谷 周平, 中野 佑紀, 浅原 浩和, 中村 孝, 木本 恒暢, 志村 考功, 渡部 平司,
    "AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上,"Invited
    電子情報通信学会 シリコン材料・デバイス研究会（SDM）, pp. 19-22,
    (機械振興会館, 東京都港区, January 30, 2013).
  27. K. Arima, A. Mura, I. Hideshima, T. Hosoi, H. Watanabe, and Z. Liu,
    "Effect of Water Adsorption on GeO2/Ge Structures Studied by In-situ XPS under Controlled Relative Humidity,"
    Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, pp. 111-114,
    (New Wilcity Yugawara, Atami, January 25-26, 2013).
  28. S. Ogawa, I. Hideshima, Y. Minoura, T. Yamamoto, A. Yasui, H. Miyata, K. Kimura, T. Hosoi, T. Shimura, and H. Watanabe,
    "Interface Engineering between Metal Electrode and GeO2 Dielectric for Future Ge-Based Metal-Oxide-Semiconductor Technologies,"
    Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, pp. 225-228,
    (New Wilcity Yugawara, Atami, January 25-26, 2013).
  29. M. Matsue, Y. Suzuki, H. Nishikawa, T. Hosoi, T. Shimura, and H. Watanabe,
    "Evaluation of the Carrier Mobility of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy,"
    Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, pp. 221-224,
    (New Wilcity Yugawara, Atami, January 25-26, 2013).
  30. A. Chanthaphan, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe,
    "Unusual Generation and Elimination of Mobile Ions in Thermally Grown SiO2 on 4H-SiC(0001),"
    Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, pp. 71-74,
    (New Wilcity Yugawara, Atami, January 25-26, 2013).
  31. Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, and H. Watanabe,
    "Gate Stack Technology for High Performance Ge MOSFETs with Ultrathin GeON Gate Dielectrics,"
    Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, pp. 31-34,
    (New Wilcity Yugawara, Atami, January 25-26, 2013).

PAGE TOP

Reviews

  1. 細井 卓治,
    "SiC MOSFET 向け AlON 高誘電率ゲート絶縁膜技術を開発 -信頼性の課題を克服-,"
    電子情報通信学会誌, Vol. 96, No. 5, pp.371-372,
    (May, 2013).

PAGE TOP