Course of Material & Life Science, Division of Advanced Science and Biotechnology
Graduate School of Engineering, Osaka University
Yearly: News & Topics
2019
| 17 Dec 2019 | InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Wada(M2) participated in SICS 2019 which was held in San Diego, U.S.A., December 11-14. Below presentations were given by the members of our laboratory. ・Assistant Prof. Hosoi: High-temperature CO2 Process for Improvement of SiC MOS Characteristics ・Mr. Terao (Research Fellow): Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment ・Mr. Wada (M2): Room Temperature Electroluminescence from Tensile-strained GeSn Lateral PIN Structures Fabricated by Nucleation-controlled Liquid-phase Crystallization |
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| 5 Dec 2019 | InfoWe had below presentations at The 6th Lecture Meeting of Advanced Power Semiconductors which was held in Hiroshima, Japan, 3-4 December, 2019. Our research titles are as follows. ・Assistant Prof. Hosoi: Design of nitrogen profile at SiO2/SiC interface and reliability improvement by CO2 annealing ・Mr. Nozaki (Technical Office Member): Reduction of Reactive Ion Etching-induced Damage of AlGaN/GaN structure with Low-bias ICPRIE ・Mr. Wada (M1): Evaluation of the Effect of Ga Diffusion into SiO2 on SiO2/GaN MOS Characteristics ・Mr. Nishimura (SCREEN): Evaluation of the surface potential of silicon carbide at MOS interface using a Laser Terahertz Emission Microscope |
| 22 Nov 2019 | InfoWe had below invided talks and presentations at IWDTF 2019 which was held in Tokyo, Japan, 18-20 November, 2019 and Mr. Wada(M1) won the IWDTF Young Award. Congratulations! ・Associate prof. Shimura: Oxidation of SiGe Alloy: Residual Order in SiO2 and Self-limiting Oxidation (Invited) ・Assistant Prof. Hosoi: Thermal Oxidation of SiC: Kinetics and SiO2/SiC Interface Property (Invited) ・Mr. Nozaki (Technical Office Member): Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface ・Mr. Wada (M1): Insight into Ga Diffusion in SiO2 Dielectric Layer and Process Design for Improved Reliability of GaN-based MOS Devices |
| 25 Oct 2019 | InfoMs. Fukuda (M1) participated in XNPIG 2019 which was held in Sendai, Japan, October 20 - 24 and gave the presentation titled as below. "X-ray phase-contrast imaging using Talbot-Lau interferometer with lanthanum targets embedded in diamond substrates" |
| 9 Oct 2019 | Updateon Members |
| 7 Oct 2019 | InfoProf. Watanabe and Assistant Prof. Hosoi participated in ICSCRM 2019 which was held in Kyoto, Japan, September 30 - October 4 and gave poster presentations titled as below. ・Prof. Watanabe: Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET based on Temperature-dependent Hall Effect Measurement ・Assistant Prof. Hosoi: Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment ・Mr. Nishimura (SCREEN): Characterization of Surface Potential of Oxidized Silicon Carbide by a Laser Terahertz Emission Microscope |
| 26 Jul 2019 | Updateon Publications |
| 24 Sep 2019 | InfoWe had 6 presentations at The 80th Japan Society of Applied Physics (JSAP) Autumn Meeting which was held in Sapporo, Japan, 18-21 September, 2019. Our research titles are as follows. ・Assistant Prof. Hosoi: Improved Vth stability of SiC MOSFET by post-nitridation CO2 annealing ・Mr. Nozaki (Technical Office Member): Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface ・Mr. Tsuji (Research Fellow): Oxidation temperature dependence of electrical properties at SiO2/SiC interface formed by Ba-enhanced oxidation ・Ms. Fukuda (M1): X-ray Phase-contrast Imaging with Multiline La Embedded X-ray Targets ・Mr. Wada (M1): Improvement of Gate Insulator Reliability by Controlling Ga Diffusion into SiO2 Layer in SiO2/GaN MOS Devices ・Mr. Nishimura (SCREEN): A study on mechanisms of laser THz emission at MOS interface - Separation of the surface electric field and the photo-Dember effect - |
| 2 Sep 2019 | InfoAssistant Prof. Hosoi participated in TWHM 2019 which was held in Toyama, Japan, August 26 - 29 and gave the invited talk titled as below. "Gate stack engineering for GaN power MOSFETs" |
| 2 Sep 2019 | Updateon Members |
| 22 Jul 2019 | Updateon Publications |
| 5 Jul 2019 | InfoAssistant Prof. Hosoi participated in INFOS 2019 which was held in Cambridge, U.K., June 30 - July 3 and gave an invited talk titled as below. "Recent progress in understanding carbon-related interface defects and electrical properties in SiC-MOS devices" |
| 21 Jun 2019 | InfoAssistant Prof. Hosoi gave a presentaion at Technical Committee on Silicon Device and Materials (SDM) which was held at Nagoya University on June 21st. The title is as below. "Characterization of nitrogen distribution near SiO2/SiC interfaces annealed in NO" |
| 14 Jun 2019 | Updateon Publications |
| 22 May 2019 | Updateon Publications |
| 15 May 2019 | Updateon Publications |
| 24 Apr 2019 | InfoA position of project researcher or project technical staff is available. Click here to view the detail. |
| 12 Apr 2019 | Updateon Publications |
| 10 Apr 2019 | InfoProf. Watanabe received the The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology. The awards ceremony will be held on 17th April. Congratulations! |
| 10 Apr 2019 | Updateon Members |
| 2 Apr 2019 | Updateon Members |
| 1 Apr 2019 | InfoMr. Oka (Research Fellow) was asked to give a presentaion at The 86th ECSJ Spring Meeting which was held at Kyoto University from 27-29 March, 2019. |
| 13 Mar 2019 | InfoWe had 7 oral presentations at The 66th Japan Society of Applied Physics (JSAP) Spring Meeting which was held in Tokyo from 9-12 March, 2019. Our research titles are as follows. ・Assistant Prof. Hosoi: Thermal oxidation of 4H-SiC under CO2 ambient ・Assistant Prof. Hosoi: Improved characteristics of 4H-SiC(0001) MOS devices by CO2 annealing ・Dr. Yamada (Project Lecturer): Impact of Forming Gas Annealing on Electrical Properties of SiO2/GaN MOS Devices ・Mr. Oka (Research Fellow): Fabrication of GeSn MSM Diode on SOI Substrate by Solid-Phase Epitaxy ・Mr. Inoue (M2): Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization ・Mr. Nishimura (SCREEN): Evaluation of the surface potential of oxidized silicon carbide by a Laser Terahertz Emission Microscope ・Mr. Nagura (Nagoya University): The physical origin of the suppression of hole leakage by Hf incorporation in AlON |
| 1 Mar 2019 | InfoAssistant prof. Hosoi received the IEEE EDS Kansai Chapter of the Year Award. Congratulations! |
| 1 Mar 2019 | InfoAssistant prof. Hosoi was asked to give below presentaion at the 216th Workshop of Silicon Technology Division, JASP which was held at Osaka University Nakanoshima Center on 28 February. "Interface property of thermally grown SiO2/SiC structures and MOS characteristics" |
| 21 Feb 2019 | Updateon Publications |
| 20 Feb 2019 | Updateon Members |
| 29 Jan 2019 | InfoWe gave below poster presentaions at the 24th Workshop on Electronic device interface technology which was held in Mishima, Shizuoka from 24-26 January and Mr. Takeda (M2) earned Hattori Award. Congratulations! ・Dr.Yamada (Project Lecturer): Synchrotron-Radiation X-ray Photoelectron Spectroscopy Study of GaOx Interlayer Growth on GaN Substrate with Different Conduction Type ・Mr.Takeda (M2): Insight into Channel Conduction Mechanism of 4H-SiC(0001) MOSFET Based on Temperature-dependent Hall-effect Measurement ・Mr.Nagura (Nagoya University): Theoretical Study on the Effect of Incorporation of Hf Atoms in AlON Dielectrics |
| 4 Jan 2019 | GreetingsHappy New Year! May 2019 be a happy and fruitful year for everyone. Thank you for your continuous support this year. |