Yearly: News & Topics

Year:

2017

28 Dec 2017 GreetingsFor all those who are involved with our laboratory's activities, we thank you so much for all your support this year and look forward to working together continuously next year. We wish you all have a happy new year!
19 Dec 2017 Updateon Publications
18 Dec 2017 InfoMr.Hosono(M2) gave a poster presentaion titled as bellow at HSTD11 & SOIPIX2017 which was held in Okinawa on 10-15 December and got the Poster Atudent Award. Congratulations!
"Improvements of Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS".
14 Dec 2017 InfoProf. Watanabe, Associate prof. Shimura, Assistant Prof. Hosoi, Mr.Sometani(Research Fellow) and Mr.Watanabe(M2) participated in 2017 SISC which was held in San Diego on 6-9 December. Below presentaions were given by the members in our Lab.
・Assistant Prof. Hosoi: 4H-SiC(0001) N- and P-channel MOSFETs with Pure SiO2 Gate Dielectrics Formed under Extreme Oxidation Conditions
・Mr.Sometani(Research Fellow): Improved Channel Mobility of 4H-SiC N-MOSFETs by Ultrahigh-Temperature Oxidation with Low-Oxygen Partial-Pressure Cooling Procedure
・Mr.Watanabe(M2):AlGaN/GaN MOS-HFET with high-quality and robust N-incorporated aluminum oxide (AlON) gate insulator
14 Dec 2017 InfoProf. Watanabe, Associate prof. Shimura, Assistant Prof. Hosoi and Mr.Oka(D3) participated in 2017 IEDM which was held in San Francisco on 2-6 December. Mr.Oka(D3) gave a presentaion titled as bellow.
"Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip".
12 Dec 2017 Updateon Publications
29 Nov 2017 InfoThe International Workshop 2017 IWDTF was held in Todaiji Culture Center, Nara on 20-22 November. Prof. Watanabe served as the Charperson and Associate prof. Shimura worked as a Steering Committee member and Assistant Prof. Hosoi worked as a Program Committee member. Besides, we had one oral presentaion and 2 poster presentaions as below and Mr.Watanabe(M2) won the IWDTF Young Award. Congratulations!
・Dr.Yamada (Project Lecturer): Physical and Electrical Characterization of AlGaN/GaN MOS Gate Stacks with AlGaN Surface Oxidation Treatment
・Mr.Nozaki (Technical Office Member): AlON Gate Dielectrics Formed by Repeating ALD-based Thin AlN Deposition and In situ Oxidation for AlGaN/GaN MOS-HFETs
・Mr.Watanabe (M2):SiO2/AlON Stacked Gate Dielectrics for AlGaN/GaN MOS-HFET
7 Nov 2017 InfoWe had 7 poster presentations at The 4th Lecture Meeting of Advanced Power Semiconductors held in Nagoya Congress Center on 1-2 November, 2017. Our research titles are as follows.
・Dr.Yamada (Project Lecturer): Reduction of SiO2/GaN interface defects by plasma oxidation of ICP-etched GaN surface
・Mr.Nozaki (Technical Office Member): Effects of nitrogen incorporation in ALD-AlON gate dielectrics for AlGaN/GaN MOS devices
・Assistant Prof. Kidist: Impact of ultrahigh-temperature gate oxidation and hydrogen annealing on the performance of 4H-SiC(0001) p-channel MOSFETs
・Mr.Takeda (M1): Evaluation of electron mobility in highly doped n+ layer using 4H-SiC(0001) junctionless MOSFET
・Mr.Terashima (M1): Influence of deposition power and post deposition annealing on SiO2/AlGaN interface property formed by PECVD
・Ms.Osako (M1): Improved Electrical Properties of SiC MOS Capacitor with UV Irradiation and Subsequent Annealing
・Mr.Nishimura (SCREEN, Collaborative Research): Characterization of 4H-SiC wafer and thermal oxide using a Laser Terahertz Emission Microscope
26 Oct 2017 InfoMr.Oka(D3)'s paper on GeSn photodiode was adopted by IEDM 2017(December 2-6, San Francisco, U.S.A.) and posted on Editor Press Center page as Technical Highlights. The tile is as follows.
Paper #16.3, "Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-Induced Liquid-Phase Crystallization for Monolithically-Integrated NIR Imager Chip"
H. Oka et al, Osaka Univ./Hiroshima Univ.
6 Oct 2017 Updateon Publications
28 Sep 2017 InfoMr. Hosono(M2) and Mr. Tsukamoto(M1) participated in 2017 JSPE(Japan Society for Precision Engineering) Autumn Meeting held at Osaka University on September 20 - 22 and Mr. Hosono won a prize of Best Poster Presentaion Award. Congratulations!
28 Sep 2017 InfoAssistant Prof. Hosoi, Assistant Prof. Kidist and Mr. Tsuji(Research Fellow) participated in International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) held in Washington D.C. on 17-24 September, 2017 and gave oral and poster presentations. The research titles are as follows.
・Assistant Prof. Hosoi: Interface Property of SiO2/4H-SiC(0001) Structures Formed by Ultrahigh-Temperature Oxidation under Low Oxygen Partial Pressure
・Assistant Prof. Kidist: Significant Performance Improvement in 4HSiC(0001) P-Channel MOSFETs with Gate Oxides Grown at Ultrahigh-Temperature
・Mr. Tsuji(Research Fellow): Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition
19 Sep 2017 InfoAssoc. Prof. Shimura and Mr. Hosono (M2) participated in The 4th International conference on X-ray and Neutron Phase Imaging with Gratings (XNPIG2017) held at ETH Zurich, on September 12 - 15, and Mr. Hosono presented his research on the subject of "X-ray Phase Contrast Imaging using a Microfocus X-ray source Conjunction with Amplitude Grating and SOI Pixel Detector".
8 Sep 2017 InfoWe had 6 oral presentations at The 78th Japan Society of Applied Physics (JSAP) Autumn Meeting in Fukuoka Convention Center on 5-8 September, 2017. Our research titles are as follows.
・Dr.Yamada (Project Lecturer): Improved SiO2/GaN interface properties on dry-etched GaN surfaces by oxidation treatments
・Mr.Nozaki (Technical Office Member): AlON gate dielectrics deposited by ALD for AlGaN/GaN MOS-HEMTs
・Mr.OKa (D3): Fabrication of Single-Crystalline GeSn n+/p Photodiode on Transparent Substrate
・Mr.Hosono (M2): Element identification in X-ray imaging using multilayer X-ray target and pixel detector
・Mr.Takeda (M1): Electron mobility characterization of 4H-SiC(0001) junctionless MOSFET
・Mr.Terashima (M1): Influence of deposition power and temperature on SiO2/AlGaN interface property deposited by PECVD
4 Sep 2017 Updateon Members
30 Aug 2017 InfoProf. Watanabe's term as the Senior Vice-President was prolonged for a year.
29 Aug 2017 InfoAssistant Prof. Hosoi was invited to give a talk at The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017) in Kyoto University, Japan, on August 27 - September 1.
29 Aug 2017 Updateon Publications
23 Aug 2017 Updateon Publications
27 Jul 2017 Updateon Publications
06 Jul 2017 Updateon Publications
06 Jul 2017 InfoAssistant Prof. Hosoi was invited to give a talk at 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2017) in Hotel Hyundai Gyeongju, Korea, on July 3 - 5.
05 Jul 2017 InfoAssoc. Prof. Shimura and Mr. Hosono (M2) participated in The 8th SOIPIX Workshop held at Miyazaki University, on June 28 - 30, and Mr. Hosono presented his research.
30 Jun 2017 Updateon Publications
09 Jun 2017 Updateon Publications
09 Jun 2017 InfoMr. Oka (D3) presented his research on the subject of "Enhancement-Mode N-Channel TFT and Room-Temperature Near-Infrared Emission Based on n+/p Junction in Single-Crystalline GeSn on Transparent Substrate" at 2017 Symposium on VLSI Technology in RIHGA Royal Hotel Kyoto, Japan, on June 5 - 8.
02 Jun 2017 Updateon Publications
02 Jun 2017 InfoAssistant Prof. Hosoi and Mr. Watanabe (M2) presented their research on tne subject of "Reliability-Aware Design of Metal/High-K Gate Stack for High-Performance SiC Power MOSFET", and "Design and Control of Interface Reaction between Al-based Dielectrics and AlGaN Layer for Hysteresis-free AlGaN/GaN MOS-HFETs" at The 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017)in Royton Sapporo, Japan, on May 28 - June 1.
23 May 2017 Updateon Publications
19 May 2017 Updateon Publications
19 May 2017 InfoAssistant Prof. Hosoi was invited to give a talk at The Vacuum Society of Japan held at Shinsyu University, on May 19.
11 Apr 2017 InfoProf. Watanabe was given a title to Distinguished Professor on April 1. Congratulations! Title grant ceremony of Osaka University Distinguished Professor
11 Apr 2017 Updateon Members
22 Mar 2017 Updateon Publications
22 Mar 2017 InfoWe had 7 oral presentations at the 64th Japan Society of Applied Physics (JSAP) Spring Meeting in PACIFICO YOKOHAMA/Kanagawa on 14-17 March, 2017. Our research titles are as follows.
・Dr. Yamada (Project Lecturer) :Diffusion of Ga into SiO2 Layer in SiO2/GaN Structures and Its Impact on Electrical Properties
・Mr.Oka(D2):Single-Crystalline Sb-Doped GeSn TFT Fabricated by Lateral Liquid-Phase Growth
・Mr.Katsu(M2):Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions
・Mr.Tomita(M1):Optical properties of tensile-strained highly-doped n-type Ge wires fabricated by lateral liquid-phase epitaxial growth
・Mr.Fujita(M1):Reduction of surface roughness in Ba-enhanced oxidized SiO2/SiC structures by reducing the amount of Ba and oxidation temperature
・Mr.Hosono(M1):X-ray Phase Contrast Imaging using Micro-focus X-ray Source and Amplitude Grating-Utilization of Short-Period Projection Image of Amplitude Grating-
・Mr.Watanabe(M1):Synchrotron Radiation Photoemission Study of Thermal Oxidation of AlGaN Surface
27 Feb 2017 Info The master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 23-24, 2017. Mr. Shogo Tanaka won the Distinguished Master's Thesis Award. Congratulations!
9 Feb 2017 Updateon Publications
25 Jan 2017 Updateon Publications
6 Jan 2017 Info Mr. Oka (D2) received the 15th IEEE EDS Japan Chapter Student Award. Congratulations!
The 15th IEEE EDS Japan Chapter Student Award Ceremony will be Held in IEEE EDS Japan Chapter meeting on 15th of February.
6 Jan 2017 Updateon Publications
5 Jan 2017 Info We wish you a happy new year!
Watanabe Lab’s 10th Anniversary Party was held at Umeda on 3rd of January. Many member of Watanabe Lab participated in the party. Thank you very much for gathering!
We appreciate all your support. We look forward to your continued good will in the coming year.

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