Course of Material & Life Science, Division of Advanced Science and Biotechnology
Graduate School of Engineering, Osaka University
Yearly: News & Topics
2018
| 11 Dec 2018 | InfoProf. Watanabe and Assistant Prof. Hosoi participated in SISC 2018 which was held in San Diego, U.S.A. on 5 - 8 December. Our research titles are as follows. ・Assistant Prof. Hosoi: High-mobility P- and N-channel GeSn Thin-film Transistors on Transparent Substrate Fabricated by Nucleation-controlled Liquid-phase Crystallization ・Mr. Nagura (Nagoya University): Effect of incorporating Hf atoms in AlON gate dielectrics on hole leakage current |
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| 20 Nov 2018 | InfoProf. Watanabe, Assistant Prof. Hosoi, Dr. Yamada and Mr. Nozaki participated in IWN2018 which was held in Kanazawa, Japan on 11 - 16 November. We gave 3 presentations titled as below. ・Assistant Prof. Hosoi: Mobility enhancement in AlGaN/GaN MOS-HFET with gate recess etching by using AION gate insulator ・Dr. Yamada (Project Lecturer): Improved reliability of SiO2/GaN MOS devices by controlling the oxide interlayer ・Mr. Nozaki (Technical Office Member):Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces |
| 13 Nov 2018 | InfoWe had 6 poster presentations at The 5th Lecture Meeting of Advanced Power Semiconductors which was held in Kyoto on 5-7 November. Our research titles are as follows. ・Dr. Yamada (Project Lecturer): Influence of GaN Conduction Type on Formation of GaOx Interlayer in SiO2/GaN Structure ・Assistant Prof. Kidist: Precise evaluation of N distribution near SiO2/SiC interface in NO-annealed SiC MOS structures ・Mr. Nozaki (Technical Office Member): Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces ・Mr. Sometani (Research Fellow): Scattering Origins of Inversion Channel Electron on 4H-SiC MOSFET Investigated by Ultralow Net Concentration P-type Epitaxial Wafers ・Mr. Takeda (M2): Insight into channel conduction mechanism based on temperature dependence of free channel electron density in 4H-SiC(0001) MOSFET ・Ms. Ohsako (M2): High-temperature CO2 treatment for improvement of SiC MOS interface properties |
| 29 Oct 2018 | Updateon Publications |
| 26 Oct 2018 | InfoProf. Watanabe and Assistant Prof. Hosoi participated in ACSIN-14 which was held in Sendai, Japan on 21 - 25 October. They each gave invited talks titled as below. ・Prof. Watanabe: Gate Stack Technology for Advanced GaN and SiC based MOS Devices (Invited) ・Assistant Prof. Hosoi: Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization (Invited) |
| 9 Oct 2018 | InfoProf. Watanabe gave 2 presentaions titled as below at AiMES 2018 which was held in Cancun, Mexico on September 30 - October 4. ・Gate Stack Technology for Advanced GaN-Based Mos Devices (Invited) ・Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy |
| 1 Oct 2018 | Updateon Members |
| 25 Sep 2018 | InfoWe had 9 oral presentations at The 79th Japan Society of Applied Physics (JSAP) Autumn Meeting which was held in Nagoya on 18-21 September, 2018. Our research titles are as follows. ・Prof. Watanabe: Advanced Gate Dielectrics for GaN-based Power Devices (Invited) ・Assistant Prof. Hosoi: Challenges in SiO2/SiC interface passivation for SiC power MOSFET (Invited) ・Assistant Prof. Hosoi: Insight into performance enhancement of SiC MOSFET by Ba incorporation into SiO2/SiC interface ・Dr. Yamada (Project Lecturer): Synchrotron Radiation XPS Study of Thermal Oxidation of SiO2/p-GaN Interface ・Dr. Yamada (Project Lecturer): Evaluation of Electrical Properties of SiO2/p-GaN MOS Capacitors ・Mr. Sometani (Research Fellow): Effect of NO post-oxidation annealing on Hall effect mobility of 4H-SiC(0001) MOSFET fabricated on low-doping concentration substrate ・Mr. Wada (M1): Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization ・Mr. Nishimura (SCREEN): Evaluation of SiO2/SiC interface using a Laser Terahertz Emission Microscope ・Mr. Nagura (Nagoya University): Theoretical study on the effect of incorporation of Hf atoms in AlON gate dielectrics |
| 18 Sep 2018 | InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Wada (M1) participated in SSDM 2018 which was held at The University of Tokyo on 9-13 September. Below presentaions were given by the member or joint research members of our Lab. ・Mr. Wada (M1): Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization ・Mr. Nishimura (SCREEN): Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope ・Mr. Nagura (Nagoya University): First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current |
| 11 Sep 2018 | InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Takeda (M2) participated in ECSCRM 2018 which was held in Birmingham, U.K. on 2-6 September. Below presentaions were given by the members or joint research members of our Lab. ・Assistant Prof. Kidist (Presentaion given by Assistant Prof. Hosoi): Sub-nm-scale depth profiling of nitrogen in NO- and N2-annealed SiO2/4H-SiC(0001) structures ・Mr. Sometani (Research Fellow): Superiority of pure O2-based gate oxidation on Hall effect mobility of 4H-SiC (0001) MOSFET revealed by low-doped epitaxial wafers ・Mr. Takeda (M2): Evaluation of the impact of Al atoms on SiO2/SiC interface property by using 4H-SiC n+-channel junctionless MOSFET ・Assoc. Prof. Umeda (University of Tsukuba): Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahigh-temperature oxidation |
| 5 Sep 2018 | Updateon Publications |
| 29 Apr 2018 | Updateon Members |
| 9 Aug 2018 | Updateon Publications |
| 3 Aug 2018 | Updateon Publications |
| 2 Aug 2018 | Updateon Publications |
| 3 Jul 2018 | InfoAssistant Prof. Hosoi gave a presentaion at Technical Committee on Silicon Device and Materials (SDM) which was held at Nagoya University on June 25th. The title is as below. "Interface engineering in GaN metal-oxide-semiconductor device with SiO2 gate insulator" |
| 7 Jun 2018 | Updateon Publications |
| 5 Jun 2018 | Updateon Publications |
| 18 May 2018 | Updateon Publications |
| 14 May 2018 | Updateon Members and Publications |
| 11 Apr 2018 | Updateon Members |
| 22 Mar 2018 | InfoWe had 7 oral presentations at The 65th Japan Society of Applied Physics (JSAP) Spring Meeting which was held in Waseda University on 17-20 March, 2018. Our research titles are as follows. ・Dr.Yamada (Project Lecturer): Control of Oxide Interlayer for Improving the Reliability of SiO2/GaN MOS Devices ・Assistant Prof.Kidist: XPS study of nitrogen profiles at SiO2/4H-SiC(0001) interfaces with NO annealing ・Mr.Nozaki (Technical Office Member): In situ Photoemission Study on Thermal Decomposition of GaOx/GaN Structures ・Mr.OKa (D3): Tensile-Strained Single-Crystalline GeSn Array on Quartz Substrate Fabricated by Laser-Induced Liquid-Phase Crystallization ・Mr.OKa (D3): NIR Optical Response of Back-Illuminated GeSn Photodiode on Quartz Substrate ・Mr.Watanabe (M2): Fabrication of recessed-gate AlGaN/GaN MOS-HFET with AlON gate insulator ・Mr.Takeda (M1): Al ion implantation into n+-channel SiC junctionless MOSFET for evaluating the impact of Al atoms on channel mobility |
| 12 Mar 2018 | InfoMr. Oka (D3) gave a presentaion at Technical Group on Information Sensing Technologies (IST) which was held at NHK Science&Technology Research Laboratories in Tokyo, Japan on March 12th. |
| 12 Mar 2018 | InfoProf. Watanabe was invited to give a talk at International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018) which was held at Meijo University in Nagoya, Japan on March 7th. |
| 7 Mar 2018 | InfoMr. Oka (D3) has done his internship in an international research institute called imec in Belgium for one month from late January. He luckily escaped from extremely cold Japan and enjoyed his stay in Belgium such as Belgian food on holidays. Details will be posted to the laboratory blog later. |
| 27 Feb 2018 | InfoThe master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 22-23, 2018. Mr. Ryo Hosono won the Distinguished Master's Thesis Award. Congratulations! |
| 2 Feb 2018 | InfoMr. Oka (D3) won the 16th IEEE EDS Japan Chapter Student Award for the second straight year. Congratulations! It's a pity that he could not participate in the award ceremony which was held in IEEE EDS Japan Chapter meeting because he's doing an internship abroad now. It was a great news, anyway. |
| 29 Jan 2018 | InfoAssistant Prof. Hosoi participated in The 17th Kansai Colloquium, Electron Devices Workshop which was held in Osaka on 29 January and gave a presentation as below. "High-mobility TFT and enhanced luminescence utilizing nucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic integration" H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, H. Watanabe |
| 22 Jan 2018 | InfoProf. Watanabe, Associate prof. Shimura, Assistant Prof. Hosoi and Mr.Tomita(M2) participated in the 23rd Workshop on Electronic device interface technology which was held in Mishima, Shizuoka on 18-20 January. Below presentaions were given by the members in our Lab. ・Assistant Prof. Hosoi: Single-Crystalline GeSn Formation on Quartz Substrate and Its Optoelectronic Applications ・Mr.Tomita(M2): Low-Temperature Optical Property and Cavity Formation of Tensile-Strained Highly n-Doped Ge Wires Fabricated by Lateral Liquid-Phase Epitaxy ・Mr.Shi(Panasonic/Collaborative Research): Recent Advances in GaN MIS-HFETs on Si Substrate |
| 4 Jan 2018 | GreetingsHappy New Year! May 2018 be a happy and fruitful year for everyone. Thank you for your continuous support this year. |