News

12 Mar 2020 Updateon Publications
6 Feb 2020 Updateon Publications
4 Feb 2020 InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Wada (M2) participated in the 25th Workshop on Electronic device interface technology which was held in Mishima, Shizuoka from January 30- February 1. We gave below presentaions and Mr. Oka, our research fellow and also one of our labo's alumni, earned the Yasuda Award. Congratulations!
・Mr. Terao (Research Fellow): The Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface
・Mr. Oka (Research Fellow): Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing
・Mr. Wada (M2): Highly Efficient Room Temperature Electroluminescence from GeSn Lateral PIN Diode Fabricated by Liquid-phase Crystallization
17 Jan 2020 Updateon Publications
17 Dec 2019 InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Wada (M2) participated in SICS 2019 which was held in San Diego, U.S.A., December 11-14. Below presentations were given by the members of our laboratory.
・Assistant Prof. Hosoi: High-temperature CO2 Process for Improvement of SiC MOS Characteristics
・Mr. Terao (Research Fellow): Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment
・Mr. Wada (M2): Room Temperature Electroluminescence from Tensile-strained GeSn Lateral PIN Structures Fabricated by Nucleation-controlled Liquid-phase Crystallization
5 Dec 2019 InfoWe had below presentations at The 6th Lecture Meeting of Advanced Power Semiconductors which was held in Hiroshima, Japan, 3-4 December, 2019. Our research titles are as follows.
・Assistant Prof. Hosoi: Design of nitrogen profile at SiO2/SiC interface and reliability improvement by CO2 annealing
・Mr. Nozaki (Technical Office Member): Reduction of Reactive Ion Etching-induced Damage of AlGaN/GaN structure with Low-bias ICPRIE
・Mr. Wada (M1): Evaluation of the Effect of Ga Diffusion into SiO2 on SiO2/GaN MOS Characteristics
・Mr. Nishimura (SCREEN): Evaluation of the surface potential of silicon carbide at MOS interface using a Laser Terahertz Emission Microscope
22 Nov 2019 InfoWe had below invided talks and presentations at IWDTF 2019 which was held in Tokyo, Japan, 18-20 November, 2019 and Mr. Wada (M1) won the IWDTF Young Award. Congratulations!
・Associate prof. Shimura: Oxidation of SiGe Alloy: Residual Order in SiO2 and Self-limiting Oxidation (Invited)
・Assistant Prof. Hosoi: Thermal Oxidation of SiC: Kinetics and SiO2/SiC Interface Property (Invited)
・Mr. Nozaki (Technical Office Member): Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface
・Mr. Wada (M1): Insight into Ga Diffusion in SiO2 Dielectric Layer and Process Design for Improved Reliability of GaN-based MOS Devices
25 Oct 2019 InfoMs. Fukuda (M1) participated in XNPIG 2019 which was held in Sendai, Japan, October 20 - 24 and gave the presentation titled as below.
"X-ray phase-contrast imaging using Talbot-Lau interferometer with lanthanum targets embedded in diamond substrates"
9 Oct 2019 Updateon Members
7 Oct 2019 InfoProf. Watanabe and Assistant Prof. Hosoi participated in ICSCRM 2019 which was held in Kyoto, Japan, September 30 - October 4 and gave poster presentations titled as below.
・Prof. Watanabe: Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET based on Temperature-dependent Hall Effect Measurement
・Assistant Prof. Hosoi: Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment
・Mr. Nishimura (SCREEN): Characterization of Surface Potential of Oxidized Silicon Carbide by a Laser Terahertz Emission Microscope
26 Jul 2019 Updateon Publications
24 Sep 2019 InfoWe had 6 presentations at The 80th Japan Society of Applied Physics (JSAP) Autumn Meeting which was held in Sapporo, Japan, 18-21 September, 2019. Our research titles are as follows.
・Assistant Prof. Hosoi: Improved Vth stability of SiC MOSFET by post-nitridation CO2 annealing
・Mr. Nozaki (Technical Office Member): Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface
・Mr. Tsuji (Research Fellow): Oxidation temperature dependence of electrical properties at SiO2/SiC interface formed by Ba-enhanced oxidation
・Ms. Fukuda (M1): X-ray Phase-contrast Imaging with Multiline La Embedded X-ray Targets
・Mr. Wada (M1): Improvement of Gate Insulator Reliability by Controlling Ga Diffusion into SiO2 Layer in SiO2/GaN MOS Devices
・Mr. Nishimura (SCREEN): A study on mechanisms of laser THz emission at MOS interface - Separation of the surface electric field and the photo-Dember effect -
2 Sep 2019 InfoAssistant Prof. Hosoi participated in TWHM 2019 which was held in Toyama, Japan, August 26 - 29 and gave the invited talk titled as below.
"Gate stack engineering for GaN power MOSFETs"
2 Sep 2019 Updateon Members
22 Jul 2019 Updateon Publications
5 Jul 2019 InfoAssistant Prof. Hosoi participated in INFOS 2019 which was held in Cambridge, U.K., June 30 - July 3 and gave an invited talk titled as below.
"Recent progress in understanding carbon-related interface defects and electrical properties in SiC-MOS devices"
21 Jun 2019 InfoAssistant Prof. Hosoi gave a presentaion at Technical Committee on Silicon Device and Materials (SDM) which was held at Nagoya University on June 21st. The title is as below.
"Characterization of nitrogen distribution near SiO2/SiC interfaces annealed in NO"
14 Jun 2019 Updateon Publications
22 May 2019 Updateon Publications
15 May 2019 Updateon Publications
24 Apr 2019 InfoA position of project researcher or project technical staff is available. Click here to view the detail.
12 Apr 2019 Updateon Publications
10 Apr 2019 InfoProf. Watanabe received the The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology. The awards ceremony will be held on 17th April. Congratulations!
10 Apr 2019 Updateon Members
2 Apr 2019 Updateon Members
1 Apr 2019 InfoMr. Oka (Research Fellow) was asked to give a presentaion at The 86th ECSJ Spring Meeting which was held at Kyoto University from 27-29 March, 2019.
13 Mar 2019 InfoWe had 7 oral presentations at The 66th Japan Society of Applied Physics (JSAP) Spring Meeting which was held in Tokyo from 9-12 March, 2019. Our research titles are as follows.
・Assistant Prof. Hosoi: Thermal oxidation of 4H-SiC under CO2 ambient
・Assistant Prof. Hosoi: Improved characteristics of 4H-SiC(0001) MOS devices by CO2 annealing
・Dr. Yamada (Project Lecturer): Impact of Forming Gas Annealing on Electrical Properties of SiO2/GaN MOS Devices
・Mr. Oka (Research Fellow): Fabrication of GeSn MSM Diode on SOI Substrate by Solid-Phase Epitaxy
・Mr. Inoue (M2): Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization
・Mr. Nishimura (SCREEN): Evaluation of the surface potential of oxidized silicon carbide by a Laser Terahertz Emission Microscope
・Mr. Nagura (Nagoya University): The physical origin of the suppression of hole leakage by Hf incorporation in AlON
1 Mar 2019 InfoAssistant prof. Hosoi received the IEEE EDS Kansai Chapter of the Year Award. Congratulations!
1 Mar 2019 InfoAssistant prof. Hosoi was asked to give below presentaion at the 216th Workshop of Silicon Technology Division, JASP which was held at Osaka University Nakanoshima Center on 28 February.
"Interface property of thermally grown SiO2/SiC structures and MOS characteristics"
21 Feb 2019 Updateon Publications
20 Feb 2019 Updateon Members
29 Jan 2019 InfoWe gave below poster presentaions at the 24th Workshop on Electronic device interface technology which was held in Mishima, Shizuoka from 24-26 January and Mr. Takeda (M2) earned Hattori Award. Congratulations!
・Dr.Yamada (Project Lecturer): Synchrotron-Radiation X-ray Photoelectron Spectroscopy Study of GaOx Interlayer Growth on GaN Substrate with Different Conduction Type
・Mr.Takeda (M2): Insight into Channel Conduction Mechanism of 4H-SiC(0001) MOSFET Based on Temperature-dependent Hall-effect Measurement
・Mr.Nagura (Nagoya University): Theoretical Study on the Effect of Incorporation of Hf Atoms in AlON Dielectrics
11 Dec 2018 InfoProf. Watanabe and Assistant Prof. Hosoi participated in SISC 2018 which was held in San Diego, U.S.A. from 5-8 December. Our research titles are as follows.
・Assistant Prof. Hosoi: High-mobility P- and N-channel GeSn Thin-film Transistors on Transparent Substrate Fabricated by Nucleation-controlled Liquid-phase Crystallization
・Mr. Nagura (Nagoya University): Effect of incorporating Hf atoms in AlON gate dielectrics on hole leakage current
20 Nov 2018 InfoProf. Watanabe, Assistant Prof. Hosoi, Dr. Yamada and Mr. Nozaki participated in IWN2018 which was held in Kanazawa, Japan, 11-16 November. We gave 3 presentations titled as below.
・Assistant Prof. Hosoi: Mobility enhancement in AlGaN/GaN MOS-HFET with gate recess etching by using AION gate insulator
・Dr. Yamada (Project Lecturer): Improved reliability of SiO2/GaN MOS devices by controlling the oxide interlayer
・Mr. Nozaki (Technical Office Member):Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces
13 Nov 2018 InfoWe had 6 poster presentations at The 5th Lecture Meeting of Advanced Power Semiconductors which was held in Kyoto from 5-7 November. Our research titles are as follows.
・Dr. Yamada (Project Lecturer): Influence of GaN Conduction Type on Formation of GaOx Interlayer in SiO2/GaN Structure
・Assistant Prof. Kidist: Precise evaluation of N distribution near SiO2/SiC interface in NO-annealed SiC MOS structures
・Mr. Nozaki (Technical Office Member): Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces
・Mr. Sometani (Research Fellow): Scattering Origins of Inversion Channel Electron on 4H-SiC MOSFET Investigated by Ultralow Net Concentration P-type Epitaxial Wafers
・Mr. Takeda (M2): Insight into channel conduction mechanism based on temperature dependence of free channel electron density in 4H-SiC(0001) MOSFET
・Ms. Ohsako (M2): High-temperature CO2 treatment for improvement of SiC MOS interface properties
26 Oct 2018 InfoProf. Watanabe and Assistant Prof. Hosoi participated in ACSIN-14 which was held in Sendai, Japan on 21 - 25 October. They each gave invited talks titled as below.
・Prof. Watanabe: Gate Stack Technology for Advanced GaN and SiC based MOS Devices (Invited)
・Assistant Prof. Hosoi: Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization (Invited)
9 Oct 2018 InfoProf. Watanabe gave 2 presentaions titled as below at AiMES 2018 which was held in Cancun, Mexico on September 30 - October 4.
・Gate Stack Technology for Advanced GaN-Based Mos Devices (Invited)
・Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy
25 Sep 2018 InfoWe had 9 oral presentations at The 79th Japan Society of Applied Physics (JSAP) Autumn Meeting which was held in Nagoya on 18-21 September, 2018. Our research titles are as follows.
・Prof. Watanabe: Advanced Gate Dielectrics for GaN-based Power Devices (Invited)
・Assistant Prof. Hosoi: Challenges in SiO2/SiC interface passivation for SiC power MOSFET (Invited)
・Assistant Prof. Hosoi: Insight into performance enhancement of SiC MOSFET by Ba incorporation into SiO2/SiC interface
・Dr. Yamada (Project Lecturer): Synchrotron Radiation XPS Study of Thermal Oxidation of SiO2/p-GaN Interface
・Dr. Yamada (Project Lecturer): Evaluation of Electrical Properties of SiO2/p-GaN MOS Capacitors
・Mr. Sometani (Research Fellow): Effect of NO post-oxidation annealing on Hall effect mobility of 4H-SiC(0001) MOSFET fabricated on low-doping concentration substrate
・Mr. Wada (M1): Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization
・Mr. Nishimura (SCREEN): Evaluation of SiO2/SiC interface using a Laser Terahertz Emission Microscope
・Mr. Nagura (Nagoya University): Theoretical study on the effect of incorporation of Hf atoms in AlON gate dielectrics
18 Sep 2018 InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Wada (M1) participated in SSDM 2018 which was held at The University of Tokyo on 9-13 September. Below presentaions were given by the member or joint research members of our Lab.
・Mr. Wada (M1): Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization
・Mr. Nishimura (SCREEN): Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope
・Mr. Nagura (Nagoya University): First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current
11 Sep 2018 InfoProf. Watanabe, Assistant Prof. Hosoi and Mr. Takeda (M2) participated in ECSCRM 2018 which was held in Birmingham, U.K. on 2-6 September. Below presentaions were given by the members or joint research members of our Lab.
・Assistant Prof. Kidist (Presentaion given by Assistant Prof. Hosoi): Sub-nm-scale depth profiling of nitrogen in NO- and N2-annealed SiO2/4H-SiC(0001) structures
・Mr. Sometani (Research Fellow): Superiority of pure O2-based gate oxidation on Hall effect mobility of 4H-SiC (0001) MOSFET revealed by low-doped epitaxial wafers
・Mr. Takeda (M2): Evaluation of the impact of Al atoms on SiO2/SiC interface property by using 4H-SiC n+-channel junctionless MOSFET
・Assoc. Prof. Umeda (University of Tsukuba): Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahigh-temperature oxidation
3 Jul 2018 InfoAssistant Prof. Hosoi gave a presentaion at Technical Committee on Silicon Device and Materials (SDM) which was held at Nagoya University on June 25th. The title is as below.
"Interface engineering in GaN metal-oxide-semiconductor device with SiO2 gate insulator"
22 Mar 2018 InfoWe had 7 oral presentations at The 65th Japan Society of Applied Physics (JSAP) Spring Meeting which was held in Waseda University on 17-20 March, 2018. Our research titles are as follows.
・Dr.Yamada (Project Lecturer): Control of Oxide Interlayer for Improving the Reliability of SiO2/GaN MOS Devices
・Assistant Prof.Kidist: XPS study of nitrogen profiles at SiO2/4H-SiC(0001) interfaces with NO annealing
・Mr.Nozaki (Technical Office Member): In situ Photoemission Study on Thermal Decomposition of GaOx/GaN Structures
・Mr.OKa (D3): Tensile-Strained Single-Crystalline GeSn Array on Quartz Substrate Fabricated by Laser-Induced Liquid-Phase Crystallization
・Mr.OKa (D3): NIR Optical Response of Back-Illuminated GeSn Photodiode on Quartz Substrate
・Mr.Watanabe (M2): Fabrication of recessed-gate AlGaN/GaN MOS-HFET with AlON gate insulator
・Mr.Takeda (M1): Al ion implantation into n+-channel SiC junctionless MOSFET for evaluating the impact of Al atoms on channel mobility
12 Mar 2018 InfoMr. Oka (D3) gave a presentaion at Technical Group on Information Sensing Technologies (IST) which was held at NHK Science&Technology Research Laboratories in Tokyo, Japan on March 12th.
12 Mar 2018 InfoProf. Watanabe was invited to give a talk at International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018) which was held at Meijo University in Nagoya, Japan on March 7th.
7 Mar 2018 InfoMr. Oka (D3) has done his internship in an international research institute called imec in Belgium for one month from late January. He luckily escaped from extremely cold Japan and enjoyed his stay in Belgium such as Belgian food on holidays. Details will be posted to the laboratory blog later.
27 Feb 2018 InfoThe master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 22-23, 2018. Mr. Ryo Hosono won the Distinguished Master's Thesis Award. Congratulations!
2 Feb 2018 InfoMr. Oka (D3) won the 16th IEEE EDS Japan Chapter Student Award for the second straight year. Congratulations! It's a pity that he could not participate in the award ceremony which was held in IEEE EDS Japan Chapter meeting because he's doing an internship abroad now. It was a great news, anyway.
29 Jan 2018 InfoAssistant Prof. Hosoi participated in The 17th Kansai Colloquium, Electron Devices Workshop which was held in Osaka on 29 January and gave a presentation as below.
"High-mobility TFT and enhanced luminescence utilizing nucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic integration"
H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, H. Watanabe
22 Jan 2018 InfoProf. Watanabe, Associate prof. Shimura, Assistant Prof. Hosoi and Mr.Tomita(M2) participated in the 23rd Workshop on Electronic device interface technology which was held in Mishima, Shizuoka on 18-20 January. Below presentaions were given by the members in our Lab.
・Assistant Prof. Hosoi: Single-Crystalline GeSn Formation on Quartz Substrate and Its Optoelectronic Applications
・Mr.Tomita(M2): Low-Temperature Optical Property and Cavity Formation of Tensile-Strained Highly n-Doped Ge Wires Fabricated by Lateral Liquid-Phase Epitaxy
・Mr.Shi(Panasonic/Collaborative Research): Recent Advances in GaN MIS-HFETs on Si Substrate
4 Jan 2018 GreetingsHappy New Year! May 2018 be a happy and fruitful year for everyone. Thank you for your continuous support this year.
28 Dec 2017 GreetingsFor all those who are involved with our laboratory's activities, we thank you so much for all your support this year and look forward to working together continuously next year. We wish you all have a happy new year!
18 Dec 2017 InfoMr.Hosono(M2) gave a poster presentaion titled as bellow at HSTD11 & SOIPIX2017 which was held in Okinawa on 10-15 December and got the Poster Atudent Award. Congratulations!
"Improvements of Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS".
14 Dec 2017 InfoProf. Watanabe, Associate prof. Shimura, Assistant Prof. Hosoi, Mr.Sometani(Research Fellow) and Mr.Watanabe(M2) participated in 2017 SISC which was held in San Diego on 6-9 December. Below presentaions were given by the members in our Lab.
・Assistant Prof. Hosoi: 4H-SiC(0001) N- and P-channel MOSFETs with Pure SiO2 Gate Dielectrics Formed under Extreme Oxidation Conditions
・Mr.Sometani(Research Fellow): Improved Channel Mobility of 4H-SiC N-MOSFETs by Ultrahigh-Temperature Oxidation with Low-Oxygen Partial-Pressure Cooling Procedure
・Mr.Watanabe(M2): AlGaN/GaN MOS-HFET with high-quality and robust N-incorporated aluminum oxide (AlON) gate insulator
14 Dec 2017 InfoProf. Watanabe, Associate prof. Shimura, Assistant Prof. Hosoi and Mr.Oka(D3) participated in 2017 IEDM which was held in San Francisco on 2-6 December. Mr.Oka(D3) gave a presentaion titled as bellow.
"Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip".
29 Nov 2017 InfoThe International Workshop 2017 IWDTF was held in Todaiji Culture Center, Nara on 20-22 November. Prof. Watanabe served as the Charperson and Associate prof. Shimura worked as a Steering Committee member and Assistant Prof. Hosoi worked as a Program Committee member. Besides, we had one oral presentaion and 2 poster presentaions as below and Mr.Watanabe(M2) won the IWDTF Young Award. Congratulations!
・Dr.Yamada (Project Lecturer): Physical and Electrical Characterization of AlGaN/GaN MOS Gate Stacks with AlGaN Surface Oxidation Treatment
・Mr.Nozaki (Technical Office Member): AlON Gate Dielectrics Formed by Repeating ALD-based Thin AlN Deposition and In situ Oxidation for AlGaN/GaN MOS-HFETs
・Mr.Watanabe (M2): SiO2/AlON Stacked Gate Dielectrics for AlGaN/GaN MOS-HFET
7 Nov 2017 InfoWe had 7 poster presentations at The 4th Lecture Meeting of Advanced Power Semiconductors held in Nagoya Congress Center on 1-2 November, 2017. Our research titles are as follows.
・Dr.Yamada (Project Lecturer): Reduction of SiO2/GaN interface defects by plasma oxidation of ICP-etched GaN surface
・Mr.Nozaki (Technical Office Member): Effects of nitrogen incorporation in ALD-AlON gate dielectrics for AlGaN/GaN MOS devices
・Assistant Prof. Kidist: Impact of ultrahigh-temperature gate oxidation and hydrogen annealing on the performance of 4H-SiC(0001) p-channel MOSFETs
・Mr.Takeda (M1): Evaluation of electron mobility in highly doped n+ layer using 4H-SiC(0001) junctionless MOSFET
・Mr.Terashima (M1): Influence of deposition power and post deposition annealing on SiO2/AlGaN interface property formed by PECVD
・Ms.Osako (M1): Improved Electrical Properties of SiC MOS Capacitor with UV Irradiation and Subsequent Annealing
・Mr.Nishimura (SCREEN, Collaborative Research): Characterization of 4H-SiC wafer and thermal oxide using a Laser Terahertz Emission Microscope
26 Oct 2017 InfoMr.Oka(D3)'s paper on GeSn photodiode was adopted by IEDM 2017(December 2-6, San Francisco, U.S.A.) and posted on Editor Press Center page as Technical Highlights. The tile is as follows.
Paper #16.3, "Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-Induced Liquid-Phase Crystallization for Monolithically-Integrated NIR Imager Chip"
H. Oka et al, Osaka Univ./Hiroshima Univ.
28 Sep 2017 InfoMr. Hosono(M2) and Mr. Tsukamoto(M1) participated in 2017 JSPE(Japan Society for Precision Engineering) Autumn Meeting held at Osaka University on September 20 - 22 and Mr. Hosono won a prize of Best Poster Presentaion Award. Congratulations!
28 Sep 2017 InfoAssistant Prof. Hosoi, Assistant Prof. Kidist and Mr. Tsuji(Research Fellow) participated in International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) held in Washington D.C. on 17-24 September, 2017 and gave oral and poster presentations. The research titles are as follows.
・Assistant Prof. Hosoi: Interface Property of SiO2/4H-SiC(0001) Structures Formed by Ultrahigh-Temperature Oxidation under Low Oxygen Partial Pressure
・Assistant Prof. Kidist: Significant Performance Improvement in 4HSiC(0001) P-Channel MOSFETs with Gate Oxides Grown at Ultrahigh-Temperature
・Mr. Tsuji(Research Fellow): Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition
19 Sep 2017 InfoAssoc. Prof. Shimura and Mr. Hosono (M2) participated in The 4th International conference on X-ray and Neutron Phase Imaging with Gratings (XNPIG2017) held at ETH Zurich, on September 12 - 15, and Mr. Hosono presented his research on the subject of "X-ray Phase Contrast Imaging using a Microfocus X-ray source Conjunction with Amplitude Grating and SOI Pixel Detector".
8 Sep 2017 InfoWe had 6 oral presentations at The 78th Japan Society of Applied Physics (JSAP) Autumn Meeting in Fukuoka Convention Center on 5-8 September, 2017. Our research titles are as follows.
・Dr.Yamada (Project Lecturer): Improved SiO2/GaN interface properties on dry-etched GaN surfaces by oxidation treatments
・Mr.Nozaki (Technical Office Member): AlON gate dielectrics deposited by ALD for AlGaN/GaN MOS-HEMTs
・Mr.OKa (D3): Fabrication of Single-Crystalline GeSn n+/p Photodiode on Transparent Substrate
・Mr.Hosono (M2): Element identification in X-ray imaging using multilayer X-ray target and pixel detector
・Mr.Takeda (M1): Electron mobility characterization of 4H-SiC(0001) junctionless MOSFET
・Mr.Terashima (M1): Influence of deposition power and temperature on SiO2/AlGaN interface property deposited by PECVD
30 Aug 2017 InfoProf. Watanabe's term as the Senior Vice-President was prolonged for a year.
29 Aug 2017 InfoAssistant Prof. Hosoi was invited to give a talk at The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017) in Kyoto University, Japan, on August 27 - September 1.
06 Jul 2017 InfoAssistant Prof. Hosoi was invited to give a talk at 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2017) in Hotel Hyundai Gyeongju, Korea, on July 3 - 5.
05 Jul 2017 InfoAssoc. Prof. Shimura and Mr. Hosono (M2) participated in The 8th SOIPIX Workshop held at Miyazaki University, on June 28 - 30, and Mr. Hosono presented his research.
09 Jun 2017 InfoMr. Oka (D3) presented his research on the subject of "Enhancement-Mode N-Channel TFT and Room-Temperature Near-Infrared Emission Based on n+/p Junction in Single-Crystalline GeSn on Transparent Substrate" at 2017 Symposium on VLSI Technology in RIHGA Royal Hotel Kyoto, Japan, on June 5 - 8.
02 Jun 2017 InfoAssistant Prof. Hosoi and Mr. Watanabe (M2) presented their research on the subject of "Reliability-Aware Design of Metal/High-K Gate Stack for High-Performance SiC Power MOSFET", and "Design and Control of Interface Reaction between Al-based Dielectrics and AlGaN Layer for Hysteresis-free AlGaN/GaN MOS-HFETs" at The 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017)in Royton Sapporo, Japan, on May 28 - June 1.
19 May 2017 InfoAssistant Prof. Hosoi was invited to give a talk at The Vacuum Society of Japan held at Shinsyu University, on May 19.
11 Apr 2017 InfoProf. Watanabe was given a title to Distinguished Professor on April 1. Congratulations! Title grant ceremony of Osaka University Distinguished Professor
22 Mar 2017 InfoWe had 7 oral presentations at the 64th Japan Society of Applied Physics (JSAP) Spring Meeting in PACIFICO YOKOHAMA/Kanagawa on 14-17 March, 2017. Our research titles are as follows.
・Dr. Yamada (Project Lecturer) :Diffusion of Ga into SiO2 Layer in SiO2/GaN Structures and Its Impact on Electrical Properties
・Mr.Oka(D2):Single-Crystalline Sb-Doped GeSn TFT Fabricated by Lateral Liquid-Phase Growth
・Mr.Katsu(M2):Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions
・Mr.Tomita(M1):Optical properties of tensile-strained highly-doped n-type Ge wires fabricated by lateral liquid-phase epitaxial growth
・Mr.Fujita(M1):Reduction of surface roughness in Ba-enhanced oxidized SiO2/SiC structures by reducing the amount of Ba and oxidation temperature
・Mr.Hosono(M1):X-ray Phase Contrast Imaging using Micro-focus X-ray Source and Amplitude Grating-Utilization of Short-Period Projection Image of Amplitude Grating-
・Mr.Watanabe(M1):Synchrotron Radiation Photoemission Study of Thermal Oxidation of AlGaN Surface
27 Feb 2017 Info The master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 23-24, 2017. Mr. Shogo Tanaka won the Distinguished Master's Thesis Award. Congratulations!
6 Jan 2017 Info Mr. Oka (D2) received the 15th IEEE EDS Japan Chapter Student Award. Congratulations!
The 15th IEEE EDS Japan Chapter Student Award Ceremony will be Held in IEEE EDS Japan Chapter meeting on 15th of February.
5 Jan 2017 Info I wish you a happy new year!
Watanabe Lab’s 10th Anniversary Party was held at Umeda on 3rd of January. Many member of Watanabe Lab participated in the party. Thank you very much for gathering!
We appreciate all your support. We look forward to your continued good will in the coming year.
12 Dec 2016 InfoMr. Oka (D2) presented his research results on 2016 IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, on December 3-7. After the IEDM, he also attend 47th IEEE Semiconductor Interface Specialists Conference (SISC) in San Diego, CA, on December 8-10 in order to gain scientific and technological information and insight.
6 Sep 2016 InfoWe will give 6 oral presentations and a poster presentation at the 77th Japan Society of Applied Physics (JSAP) Autumn Meeting in TOKI MESSE/Nigara on 13-16 September 2016. Our research titles are as follows.
・Dr. Yamada (Project Lecturer) :GaN 表面の熱酸化におけるキャップ層の効果、熱酸化処理によるSiO2/GaN 界面でのGaOx 形成とMOS 界面特性向上
・Dr. Chanthaphan (JSPS Research Fellow):Improvement of physical and electrical properties in SiC-MOSdevices using deposited insulators on barium-enhanced thermal oxides
・Mr.Katsu(M2):理想SiO2/SiC 界面の実現に向けた超高温・低酸素分圧酸化の検討
・Mr.Tomita(M1):Sb ドープアモルファスGe の局所溶融横方向液相エピタキシャル成長によるn 型Ge 細線の作製と評価
・Mr.Hosono(M1):振幅格子とピクセル検出器を用いたエネルギー分解X 線位相イメージングの検討
・Mr.Watanabe(M1):AlGaN/GaN MOS-HEMT 電気特性劣化のゲート絶縁膜成膜温度依存性の検証
5 Jan 2017 Info I wish you a happy new year!
Watanabe Lab’s 10th Anniversary Party was held at Umeda on 3rd of January. Many member of Watanabe Lab participated in the party. Thank you very much for gathering!
We appreciate all your support. We look forward to your continued good will in the coming year.
12 Dec 2016 InfoMr. Oka (D2) presented his research results on 2016 IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, on December 3-7. After the IEDM, he also attend 47th IEEE Semiconductor Interface Specialists Conference (SISC) in San Diego, CA, on December 8-10 in order to gain scientific and technological information and insight.
21 Sep 2016 Info Mr. Tomita (M1) received the Poster Award in the 77th Japan Society of Applied Physics (JSAP) Autumn Meeting (9/13-16, TOKI MESSE/Nigara). Congratulations!
2 Sep 2016 InfoAssoc. Prof. Shimura will present his research on The 7th International Symposium on Advanced Science and Technology of Silicon in Kona, Hawaii, on Nobember 21-27 2016.
2 Sep 2016 InfoProf. Watanabe will present an invited talk on PRiME 2016 in Honolulu, Hawaii, on October 3-7, 2016.
2 Sep 2016 InfoAssistant Prof. Hosoi will present an invited talk at 11th The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Haidiki, Greece, on September 24-30, 2016. Dr. Chanthaphan(JSPS Research Fellow) will present his research on the conference.
2 Sep 2016 InfoProf. Watanabe was assigned to be Senior Vice-President on August 26.
13 Jun 2016 InfoMr. Oka (D2) will present his research result on 2016 IEEE Silicon Nanoelectronics Workshop in Honolulu, HI, on June 12-13, 2016.
25 Mar 2016 InfoMr. Ogawa (Toray Research Center) received Poster Award in the 63rd Japan Society of Applied Physics (JSAP) Spring Meeting. Congratulations!
We made 12 poster and orlal presentations on each research topics.
26 Feb 2016 InfoThe master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 23-24, 2016. Mr. Yasuhiro Ito won the Distinguished Master's Thesis Award. Congratulations!
25 Jan 2016 Info Mr. Tanaka (M1) received Hattori Award in the 21st Workshop on Gate Stack Technology and Physics (1/21-23, Mishima, Shizuoka, Japan). Congratulations!
07 Dec 2015 InfoAssistant Prof. Hosoi and Mr. Asahara (M2) presented their research results on "SiO2/SiC Interface Nitridation by High Temperature Pure Nitrogen Annealing", and "Effect of Nitrogen Incorporation into Al-based Gate Insulator in AlGaN/GaN MOS-HEMT" at the 46th IEEE Semiconductor Interface Specialists Conference (SISC) in Arlington, VA, on December 2-5. Prof. Watanabe and Assistant Prof. Hosoi also attend the IEEE International Electron Devices Meeting (IEDM) in Washington, DC, on December 6-9 in order to gain scientific and technological information and insight.
6 Oct 2015 InfoAssoc. Prof. Shimura was invited to give a talk on "Fabrication of High-Quality Ge-on-Insulator Structures by Lateral Liquid Phase Epitaxy" at The 228th ECS Meeting held at Hyatt Regency Phonix in Phonix, AZ, USA, on October 11-16.
5 Oct 2015 InfoThis week, Prof. Watanabe, Assistant Prof. Hosoi, Dr. Chanthaphan(JSPS Research Fellow) and Mr. Katsu (M1) will present their research results on The 16th International Conference at Silicon Carbide and Related Materials (ICSCRM2015) (October 4-11, Giardini Naxos, Italy). Their research titles are as follows.
・Prof. Watanabe : Theoretical study on the identity of positive mobile ions in SiC-MOSFET and their diffusion process (collaborative research with Shirakawa Lab. of Graduate School of Engineering, Nagoya University)
・Assistant Prof.: Flatband voltage shift depending on SiO2/SiC interface charges in 4H-SiC MOS capacitors with AlON/SiO2 stacked gate dielectrics
・Dr. Chanthaphan (JSPS Research Fellow) : 1-Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing, 2-Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures
・Mr. Katsu (M1) : Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices(Poster Presentation)
9 Sep 2015 InfoWe will present each research topics at the 76th Japan Society of Applied Physics (JSAP) Autumn Meeting held at Nagoya Congress Center on 13-16 September 2015. Prof. Watanabe will also present his research at the symposium. Our research topics are as follows.
・Prof. Watanabe : Gate insulator technology for advanced electronics
・Dr. Chanthaphan (JSPS Research Fellow), Mr. Nagai(M2) and Mr. Katsu (M1) : SiC power devices
・Dr. Yamada (Project Lecturer) and Mr. Asahara (M2) : GaN power devices
・Mr. Amamoto (M2) : Fabrication of GeSn wires and their optical properties
3 Sep 2015 InfoAssoc. Prof. Shimura, Mr. Morimoto (D3), Mr. Ito-Yasu (M2), and Mr. Yamasaki (M2) will participate in The 3rd Meeting of X-Ray and Neutron Phase Imaging with Gratings(XNPIG2015) held at the U.S. National Institutes of Health in the Washington D.C. area, USA, on September 8-11. Mr. Morimoto (D3), Mr. Ito-Yasu (M2), and Mr. Yamasaki(M2) will present their reseach results on X-ray phase contrast imaging with Talbot-Lau interferometer.
2 Sep 2015 InfoMr. Katsu (M1) participated in the 4th Power-Electronics Summer School held at AIST on August 28-31 in Tsukuba. He could experience the leading edge of the research and development by learning about the basis of Power-Electronics and having opportunity to speak with a variety of industry representatives and many other universities' students.
31 Aug 2015 InfoMr. Mikito Nozaki (Technical Office Member) is going to present his research result at 11th International Conference on Nitride Semiconductors (ICNS-11) in Beijing, China on August 31-September 4, 2015.
14 Jul 2015 InfoProf. Watanabe has received the 4th Presidential Awards for Achievement in Research, Osaka University. It is the second year in a row. Assistant Prof. Hosoi has received the 4th Presidential Awards for Encouragement in Research, Osaka University.
04 Jun 2015 InfoMr. Morimoto (D3) received the Incentive Award in the First Half of 2015 from the Association for the Advancement of Manufacturing and Technology (AAMT) . Congratulations!
With his prize money, he will present his research at the Third Meeting of X-Ray and Neutron Phase Imaging with Gratings (XNPIG2015) in the Washington D.C. area of the United States in September.
12 Mar 2015 InfoThe final oral defence for bachelor's degree in the Course of Precision Science and Technology was held on March 11, 2015. From our laboratory, 4 students gave their presentations of the theses to the committee and successfully defended.
06 Mar 2015 InfoWe will present 8 research topics at the 62nd Japan Society of Applied Physics (JSAP) Spring Meeting in Hiratsuka Campus, Tokai University on 11-14 March 2015: Prof. Watanabe and Assistant Prof. Hosoi will present their research on power semiconductor devices at the symposium. Mr. Morimoto (D2) and Mr. Sano (B4) will present on embedded X-ray targets, Mr. Amamoto (M1) on GeSn photoluminescence, Mr. J. Itho (M1) on GaN devices, and Mr. Fukushima (M2) and Mr. Katsu (B4) on SiC-MOS devices. In addition, Ms. Takahashi (KEK-PF), Associate Prof. Shimura's collaborator, will present her work on X-ray topography.
27 Feb 2015 InfoThe master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 23-24, 2015. Mr. Fukushima won the Distinguished Master's Thesis Award. Congratulations!
27 Jan 2015 InfoWe will present research topics at the 20th Workshop on Gate Stack Technology and Physics in Tray Training Center on 30-31 January 2015. Dr. Chanthaphan (JSPS Research Fellow) and Mr. Amamoto (M1) will present their research results on SiC-MOS devices and optical property of GeSn alloys, respectively. Also, Dr. Ando who joined our lab and earned his doctorate degree from Osaka University will present an invited talk on high-k/Ge gate stack at the meeting.
05 Jan 2015 InfoWe wish you a happy, peaceful and prosperous 2015.
08 Dec 2014 InfoAssistant Prof. Hosoi and Mr. Oka (M2) will present their research results on fabrication of GeSn-on-insulator structure, and Ge-MOS transistors respectively at the 45th IEEE Semiconductor Interface Specialists Conference (SISC) in San Diego, CA, on December 10-13. They will also attend the IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, on December 15-17 in order to gain scientific and technological information and insight. After the IEDM, they will visit UC Berkeley to take a tour of the clean room at the Marvell Nanofabrication laboratory. This is going to be a busy but very exciting trip.
18 Nov 2014 InfoMr. Fukushima (M2), Mr. Nagai (M1) and Mr. Cheng (M1) will present posters on SiC thermal oxide at the 1st Meeting on Advanced Power Semiconductors (November 19-20, Winc Aichi).
05 Nov 2014 InfoPositions of specially appointed assistant professors and/or postdoctoral researchers are available. Click here to view the positions details [PDF]
21 Oct 2014 InfoMr. Morimoto (D2) won the Award for Encouragement of Research in IUMRS-ICA2014 for his research presentation at the International Union of Materials Research Societies- The IUMRS International Conference in Asia 2014(August 24-30, 2014, Fukuoka University). Congratulations!
30 Sep 2014 InfoThree students finished their degrees this month -one each from the doctoral course, the master's course, and the undergraduate course. Congratulations to all of the students! We wish them all the happiness on their life journey.
24 Sep 2014 InfoThis week, Assistant Prof. Hosoi and Mr. Xu (D1 with full-time work) have been attending the 10th European Conference on Silicon Carbide & Related Materials(ECSCRM2014, Septembner 21-25, Grenoble, France).
Assistant Prof. Hosoi will present his research work in collaboration with Prof. Tsunenobu Kimoto (Kyoto Univ.) on SiC-MOS interfaces. Mr. Xu will present his research results on SiC-MOS interfaces as well.
Furthermore, Mr. Kentaro Endo (Nagoya Univ.) will present his collaborative work with us on SiC-MOS through first-principles calculation.
16 Sep 2014 InfoMr. Morimoto (D2) will deliver his award-winning presentation as a recipient of the 36th Young Scientist Oral Presentation Award, JSAP, at the 75th Japan Society of Applied Physics (JSAP) Autumn Meeting in Sapporo Campus, Hokkaido University on 17-20 September 2014.
We will present 7 research topics also at the meeting: Mr. Morimoto (D2), Mr.Y. Itoh (M1), and Mr. Yamazaki (M1) will present on x-ray phase contrast imaging, Mr. Fukushima (M2) and Mr. Nagai (M1) on SiC thermal oxide, and Ms. Kajimura (M2) and Mr. Tominaga (M1) on liquid-phase epitaxially grown GeSn layer.
10 Sep 2014 InfoWe are excited to announce that we have moved back to our former building because the seismic safety construction was completed. Our new offices are located on 6nd Floor, M1 Building, 2-1 Yamadaoka, Suita, Osaka 565-0871, JAPAN. Our phone numbers and other contact information remain the same.
12 Aug 2014 InfoMr. Morimoto (D2) will present his research results on x-ray phase contrast imaging at the International Union of Materials Research Societies- The IUMRS International Conference in Asia 2014(IUMRS-ICA, August 24-30, 2014, Fukuoka University).
08 Jul 2014 InfoProf. Watanabe is the recipient of the 3rd Presidential Awards for Achievement in Research, Osaka University.
23 Jun 2014 InfoMr. Oka (M2) received the 2014 IEEE EDS Kansai Chapter IMFEDK Student Paper Award. Congratulations!
18 Jun 2014 InfoMr. Asahara (M1) will present his research results on Ge-MOS devices at the Conference of Technical Committee on Silicon Device and Materials (SDM, June 19, 2014, Nagoya University).
Mr. Oka (M2) will also present on Ge-MOS devices at the 2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK, June 19-20, 2014, Ryukoku University Avanti Kyoto Hall).
16 Jun 2014 InfoCongratulations to Mr. Chanthaphan (D3) on a successful defense of his PhD dissertation on SiC-MOS devices.
28 May 2014 InfoAssistant Prof. Hosoi will present his research results on Ge-MOS devices at 2014 IEEE Silicon Nanoelectronics Workshop (SNW, June 8-9, 2014, Honolulu, HI USA).
13 May 2014 InfoMr. Morimoto (D2) received the 36th Young Scientist Oral Presentation Award, JSAP. Congratulations! He will deliver his award-winning presentation at the 75th Autumn Meeting.
24 Mar 2014 InfoMr. Ogawa (D2 with full-time work) received Poster Award in the 61st Japan Society of Applied Physics (JSAP) Spring Meeting. Congratulations!
Mr. Tanaka (B4) delivered his award-winning presentation as a recipient of the 35th Young Scientist Oral Presentation Award, JSAP. It was a great presentation.
Mr. Morimoto (D1) , Mr. Oka (M1) , Ms. Kajimura (M1), and Mr. Tominaga (B4) also made wonderful presentations.
03 Mar 2014 InfoThe master's candidate's thesis oral defense in the Course of Material & Life Science was held on February 27-28, 2014. Mr. Minoura won the Best Master's Thesis Award. Mr. Matsue and Mr. Fujino won the Distinguished Master's Thesis Award respectively. Congratulations!
26 Feb 2014 InfoWe will present 9 research topics at the 61st Japan Society of Applied Physics (JSAP) Spring Meeting in Sagamihara Campus, Aoyama Gakuin University on 17-20 March 2014: Mr. Tanaka (B4) will deliver his award-winning presentation on high-k/Ge gate stack as a recipient of the 35th Young Scientist Oral Presentation Award, JSAP. Mr. Morimoto (D1) and Mr. Fujino will present on Talbot-Lau interferome, Ms. Kajimura (M1) and Mr. Tominaga (B4) on rapid-melt-grown GOI structures, and Mr. Oka on Ge-MOS device. In addition, Mr. Ogawa (D2 with full-time work) will present his work on high-k/Ge gate stack, and Associate Professor Arima, our collaborator, will give a talk on Ge oxide films.
07 Feb 2014 InfoMr. Chanthaphan (D3) received the Best Presentation Award of the International Workshop on Atomically Controlled Fabrication Technology. Congratulations!
05 Feb 2014 InfoMr. Chanthaphan (D3) will present his research findings on SiC-MOS, and Mr. Morimoto (D1) will present his research results on X-ray phase imaging with Talbot-Lau interferometer at the International Workshop on Atomically Controlled Fabrication Technology in Nakanoshima-Center, Osaka University, on February 5-6, 2014.
22 Jan 2014 InfoWe will present research topics at the 19th Workshop on Gate Stack Technology and Physics in New Welcity Yugawara on 23-25 January 2014. Mr. Tanaka (B4) will present on High-k/Ge Gate Stack, Mr. Oka (M1) on Metal/Ge junciton technology, and Ms. Kajimura (M1) on optical property of rapid-melt-grown GOI structures. Also, Associate Professor Arima (Dept. of Precision Science and Technology, Osaka University) will present synchrotron radiation experimental outcomes obtained from joint research on Ge oxide between his group and us.
10 Jan 2014 InfoMr. Morimoto (D1) and Mr. Fujino (M2) will present their research results on X-ray phase imaging with Talbot-Lau interferometer at International Workshop on X-ray and Neutron Phase Imaging with Gratings(XNPIG2014), which will be held in Garmisch-Partenkirchen, Bavaria, Germany on January 21-24, 2014.
06 Jan 2014 InfoHappy 2014! We wish you a happy, healthy and successful new year.
27 Dec 2013 InfoOn December 24th and 27th, we held our annual winter laboratory review meeting which included progress summaries from each research group.
The big change this year was our relocation because of the earthquake-resistant renovations in the former building. It was a hectic task, but it is very nice for us to welcome the New Year in the brand-new building which feels like home now. 2014 will be another relocating year as we move back to renovated M1 bulding. While this can be frustrating, we will try to enjoy the change taking the opportunity to make significant changes in ourselves.
We appreciate every opportunity and all the support given throughout this year.
We wish you all the best as you embark on 2014!
26 Nov 2013 InfoAssistant Prof. Hosoi was invited to give a talk on SiC-MOS at the 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013) (Las Vegas, NV, USA, on December2-6).
He will also present his research results on high-k Ge gate stack at the 44th IEEE Semiconductor Interface Specialists Conference (SISC) in Arlington, VA, on December 5-7. At the same conference, Mr. Matsue (M2) will deliver his oral presentation on optical properties of germanium-on-insulator formed by liquid-phase epitaxy.
01 Nov 2013 InfoAssistant Prof. Hosoi and Mr. Minoura (M2) will present their research results on Ge-on-Insulator devices formed by liquid-phase epitaxial growth and metal/Ge contact technology, respectively, at 2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF2013, November 7-9, 2013, University of Tsukuba, Tokyo Campus, Tokyo, Japan).
27 Sep 2013 InfoAssistant Prof. Hosoi and Mr. Chanthaphan (D2) will present their research findings on SiC-MOS at the International Conference on Silicon Carbide and Related Materials 2013 (September 29 - October 4, 2013, Phoenix Seagaia Resort, Miyazaki, Japan). Mr. Chathaphan will give two poster presentations.
12 Sep 2013 InfoProf. Watanabe became a Visiting Professor at Institute of Microelectronics of Chinese Academy of Siences.
20 Aug 2013 InfoWe will present 7 research topics at the 74th Japan Society of Applied Physics (JSAP) Autumn Meeting at Doshisya University September 16-20, 2013. Mr. Chanthaphan (D2) will present on SiC-MOS, Mr. Morimoto (D1) and Mr. Fujino (M2) on Talbot-Lau interferome, Mr. Matsue(M2)on Ge photonics, and Mr. Minoura(M2)and Mr. Tanaka(B4)on Ge-MOS. Associate Professor Arima, our collaborator, also will present his research on XPS measurement of GeO2.
Meanwhile, at the JSAP-MRS Joint Symposia held simultaneously, Project Assistant Prof. Fukuta will present her research on bio-nano process.
12 Aug 2013 InfoProf. Watanabe and our former staff member, Ms. Fukuta (Project Assistant Prof. at Tokyo University of Agriculture and Technology) participated in the CREST annual summer meeting on August 9-10, 2013 in Atami.
09 Aug 2013 InfoA student from Niihama National College of Technology(Environmental Materials Engineering Course, Production Engineering Program), has successfully completed a 3 week internship in the lab.
02 Aug 2013 InfoAssistant Prof. Hosoi is the recipient of the 2nd Presidential Awards for Encouragement in Research, Osaka University.
29 Jul 2013 InfoAs part of a class with the Research Exercise in Special Topics, first year Master's degree students in chemistry carried out experiments with us from July 22 through 26, 2013. We hope that this experience will be advantageous to their future career. Commemorative Photo in the Clean Room
24 Jun 2013 InfoTwo international conferences in the same week!
Prof. Watanabe will give an invited talk on SiC devices at AWAD2013( Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices) in Seoul, Korea.
Assistant Prof. Hosoi will present his research on Ge-MOS at INFOS2013(18th Conference of "Insulating Films on Semiconductors) in Cracow, Poland.
17 Jun 2013 InfoProf. Watanabe and Assistant Prof. Hosoi will give speeches on SiC-MOS at the Conference of IEICE Technical Committee on Silicon Device and Materials (SDM) at their request. (The Kikai Shinko Kaikan on June 18)
Mr. Hosoi will also present his research result on Ge-MOS at the conference.
13 Jun 2013 InfoWe have relocated to the new International Center for Biotechnology building while our former building undergoes an earthquake proofing retrofit. Our new address is
2nd Floor, International Research Complex for Biotechnology, 2-1 Yamadaoka, Suita, Osaka 565-0871, JAPAN
Only our physical address has changed. Our phone numbers and other contact information remain the same. Please send all correspondence to our new address. Thank you!
01 Apr 2013 Info2013 MRS Spring Meeting & Exhibit will be held this week, with Prof. Watanabe to co-chair. (April 1-5, 2013 at the Moscone West Convention Center, San Francisco,CA, USA)
21 Mar 2013 InfoWe will present 6 research topics at the 60th Japan Society of Applied Physics (JSAP) Spring Meeting in Kanagawa Institute of Technology on 27-30 March 2013. : Assistant Professor Hosoi and Mr. Chanthaphan (D2) will present on SiO2/SiC interface, Mr. Hideshima (M2) on High-k/Ge stack, Mr. Morimoto(M2) and Mr. Fujino (M1) on Talbot-Lau interferome, and Mr. Nishikawa (B4) on GOI technology. Associate Professor Arima, our collaborator, also will present his research results on Ge oxide films.
19 Mar 2013 InfoMr. Nishikawa (B4) received "School of Engineering Award 2013, Osaka University". Recipients will be honored at the award ceremony on 22 March, 2013.
12 Mar 2013 InfoWe had presentation & defense of undergraduate theses in Precision Science & Technology Department, Division of Applied Science on 8 March 2013. Mr. Uyama, Mr. Nishikawa, and Mr. Higuchi successfully defended their theses. Congratulations!
07 Mar 2013 InfoWe had presentation & defense of the theses for the master's degree in Course of Material & Life Science on 27-28 February 2013. Please visit our blog to learn more about the event.
01 Feb 2013 InfoWe received a second "Letter from Belgium" from Mr. Hashimoto (D3) working on his internship program at IMEC (Leuven, Belgium). It is posted on our blog.
28 Jan 2013 InfoMr. Matsue (M1) received "Young Researcher Award" for his poster presentation in the 18th Workshop on Gate Stack Technology and Physics, Jan 25-26, 2013. We are honored to have a recipient of the awards for the 6th year in a row.
Masahiro Matsue
"Evaluation of the Carrier Mobility of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy"
17 Jan 2013 InfoWe will present research topics at the 18th Workshop on Gate Stack Technology and Physics in New Welcity Yugawara on 25-26 January 2013. Mr. Chanthaphan (D2) will present on SiC thermal oxide, Mr. Ogawa (D2) on Ge oxide, Mr. Minoura (M1) on Ge transistors, and Mr. Matsue (M1) on GOI technology. Also, Associate Professor Arima (Dept. of Precision Science and Technology, Osaka University) will present synchrotron radiation experimental outcomes obtained from joint research on Ge oxide between his group and us.
04 Jan 2013 InfoWe wish you a Happy New Year 2013. May happiness, health and luck be with you. We will work harder to accomplish even more.
25 Dec 2012 InfoMr. Hashimoto (D3) presented and successfully defended his doctoral thesis before the thesis board, though he was the first presenter.
We will have presentation & defense of the thesis for the master's degree and the bachelor degree in February and March respectively. We hope the junior students strive to succeed with theses as did Mr. Hashimoto.
13 Dec 2012 InfoResearch results on SiC MOS in collaboration between Assistant Prof. Hosoi, Prof. Watanabe, Prof. Tsunenobu Kimoto (Kyoto Univ.), ROHM Co., Ltd., and Tokyo Electron Limited, were reported in media.
【Articles】 Click here to view the newspaper articles [PDF, 1,701KB, 5pages]
07 Dec 2012 InfoMr. Hideshima (M2) and Mr. Matsue (M1) will present their research results on Ge MOS transistors and lateral liquid-phase epitaxy of Ge-on-insulator (GOI), respectively, at the 8th Handai Nanoscence and Nanotechnology International Symposium. (December 10-11, 2012, Icho Kaikan, Osaka University)
04 Dec 2012 InfoThree people are traveling to the United States tomorrow. Assistant Prof. Hosoi will present his research results on SiC devices at the 43rd IEEE Semiconductor Interface Specialists Conference (SISC) in San Diego, CA, on December 6-8. At the same conference, Mr. Chikaraishi (M2) will give an oral presentation on metal/high-k gate stacks, and Mr. Minoura (M1) will also give an oral presentation on Ge MOS transistors.
Assistant Prof. Hosoi will present his research on SiC devices also at the IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, on December 10.
Mr. Minoura will take part in a synchrotron radiation experiment led by Associate Prof. Arima at Advanced Light Source (ALS) in Ernest Orlando Lawrence Berkeley National Laboratory.
30 Nov 2012 InfoAssociate Prof. Shimura was invited to give a talk on Fabrication of High-quality SiGe-on-Insulator and Ge-on-Insulator Structures by Rapid Melt Growth at the Visual-JW2012 (Osaka, Japan, on November 28-30, 2012).
16 No 2012 InfoAssociate Prof. Shimura will present his research results on GOI technology at the 6th International Symposium on Advanced Science and Technology of Silicon Materials (Kona, Hawaii, on November 19-23, 2012).
16 Nov 2012 InfoAssistant Prof. Hosoi, Mr. Chanthaphan (D2), and Mr. Ikeguchi (M2) will deliver poster presentations at the 21st Meeting on SiC and Related Wide Bandgap Semiconductors, which will be held in Osaka City Central Public Hall on 19 and 20 November 2012.
13 Nov 2012 InfoWe are pleased to announce the launch of our renewed website. We hope our website continues to be a source of useful information for you.
29 Oct 2012 InfoMr. Suzuki (M2) was invited to present a talk at the 12th Kansai Colloquium, Electron Devices Workshop held by IEEE Electron Devices Society (EDS) Kansai Chapter.
25 Oct 2012 InfoOur research results were presented at the fifth international symposium on Atomically Controlled Fabrication Technology organized by the Osaka University Global COE Program "Atomically Controlled Fabrication Technology".
05 Oct 2012 InfoProf. Watanabe will give an invited talk on GOI technology at the PRiME 2012 (ECS 222nd Meeting).
05 Oct 2012 InfoMr. Salayev has completed the International Program of Frontier Biotechnology. Congratulations to Ahmed on the successful completion of his master's degree. We wish you the best for your future work in your country.
At nearly the same time that Ahmed was leaving, we were very happy to have a new student join us. He is Mr. Alan from Istanbul, Turkey. He will study in the Quantum Engineering Design Course.
26 Sep 2012 InfoAssociate Professor Shimura will present his research on GOI technology at the International Union of Materials Research Societies - International Conference on Electronic Materials( IUMRS-ICEM 2012)in Yokohama from 23 September to 28 September. At the same conference, Mr. Chikaraishi (M2) will present his research on metal/high-k gatestack.
14 Sep 2012 InfoAt the 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2012)in Saint Petersburg, Russia from 15 September to 20 September, Associate Professor Shimura will present his research on characterization of multicrystalline Si in solar modules by synchrotron white x-ray microbeam diffraction, and Mr. Morimoto (M2) will present his research on development of multiline embedded x-ray targets for x-ray phase contrast imaging.
10 Sep 2012 InfoWe will present 6 research topics at the 73rd Japan Society of Applied Physics (JSAP) Autumn Meeting in Ehime University/Matsuyama University on 11-14 September 2012. : Assistant Professor Hosoi and Mr. Ikeguchi (M2) will present on SiC-MOS, Mr. Hashimoto (D3) on novel sensing device, Mr. Fujino (M1) on Talbot-Lau interferome, and Mr. Suzuki (M2) on GOI technology. Associate Professor Arima, our collaborator on Ge-MOS, also will present his research.
31 Aug 2012 InfoProf. Watanabe and Assistant Prof. Hosoi will present their research results on SiC power device at the 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012) in Saint Petersburg, Russia on 2-6 September 2012.
10 Aug 2012 InfoA student from Niihama National College of Technology in Niihama, Ehime, has successfully completed a 3 week internship in the lab.
27 Jul 2012 InfoAs part of a class with the Research Exercise in Special Topics, first year Master's degree students in chemistry and biology carried out experiments with us from July 23 through 27, 2012.
26 Jul 2012 InfoMr. Salayev got through his thesis presentation for his Master's Degree on the International Program of "Frontier Biotechnology".
21 Jun 2012 InfoAssistant Prof. Hosoi was invited to present a talk on SiC-MOS device at the Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012). (Okinawa Seinen-kaikan, Naha, on June 27-29, 2012)
20 Jun 2012 InfoAssistant Prof. Hosoi and Mr. Minoura (M1) will present their research results on high-k dielectrics and Ge-MOSFET, respectively, at the Conference of IEICE Technical Committee on Silicon Device and Materials (SDM). (Nagoya University on June 21)
18 Jun 2012 InfoAssistant Prof. Hosoi presented his research results on high-k dielectrics at the 2012 IEEE Silicon Nanoelectronics Workshop (SNW) in Honolulu on June 10-11.
19 Apr 2012 InfoWe are excited to have our new members! Welcome Mr. Nishikawa, Mr. Uyama, Mr. Tanaka, Mr. Higuchi, Mr. Nohmi and Mr. Kenta Morimoto!
17 Apr 2012 InfoMr. Chanthaphan (D1) presented his research results on SiC-MOS device at the 2012 MRS Spring Meeting (San Francisco on April 9-13).

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