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会員によるものだけでなく、X線トポグラフィ関連の論文のリスト、会議録、アブストラクト集等を掲載しています。
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"Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing", K. Ishiji, R. Ohtani, S. Kawado, Y. Hirai, and S. Nagamachi,Semicond. Sci. Technol. 26, 025009 (2011).
"Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography", H. Yamaguchi and H. Matsuhata, J. Electron. Mater. 39,715 (2010).
"Structural Characterization of Doped GaSb? Single Crystals by X-ray Topography", M. G. Hönnicke, I. Mazzaro, J. Manica, E. Benine, E. M. da Costa, B. A. Dedavid, C. Cusatis and X. R. Huang, J. Electron. Mater. 39,727 (2010).
"X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe?(211) and Its Comparison with Epitaxially Grown CdTe? Buffer Layers on Si and Ge Substrates", J. K. Markunas, L. A. Almeida, R. N. Jacobs, J. Pellegrino, S. B. Qadri, N. Mahadik and J. Sanghera, J. Electron. Mater. 39,738 (2010).
"Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals", Y. Zhang, H. Chen, G. Choi, B. Raghothamachar, M. Dudley, J. H. Edgar, K. Grasza, E. Tymicki, L. Zhang and D. Su, J. Electron. Mater. 39,799 (2010).
"Synchrotron X-Ray Topography Study of Structural Defects and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance", B. Raghothamachar, J.J. Carvajal, M.C. Pujol, X. Mateos, R. Solé, M. Aguiló, F. Díaz and M. Dudley, J. Electron. Mater. 39,823 (2010).
"Phase modulation effects in X-ray diffraction from a highly deformed crystal with variable strain gradient", M. Shevchenko, Acta Cryst. A65, 352-359 (2009).
「X線トポグラフィ研究会の現状報告」、飯田 敏、志村考功、梶原健太郎、SPring-8利用者情報, 13, 50-55 (2008).
"Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices", T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida and H. Watanabe, ECS Transactions 13, 75-82 (2008).
"Characterization of Strained Si Wafers by X-ray Diffraction Techniques", T. Shimura, K. Kawamura, M. Asakawa, H. Watanabe, K. Yasutake, A. Ogura, K. Fukuda, O. Sakata, S. Kimura, H. Edo, S. Iida and M. Umeno, J. Mater. Sci.: Mater. Electron. 19 189-193 (2008).
"Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography", T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura and H. Watanabe, ECS Transactions 16, 539-543 (2008).
"White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers" K. Fukuda, T. Yoshida, T. Shimura, K. Yasutake, M. Umeno, and S. Iida, Jpn. J. Appl. Phys. 45, 6795-6799 (2006).
「タンパク質単結晶の放射光白色Ｘ線トポグラフィ」、橘 勝、小泉晴比呂、小島謙一、PF News 22-1, 17-23 (2006). http://pfwww.kek.jp/publications/pfnews/22_1/p17-23.pdf
「超高品質SiC単結晶のトポグラフを用いた欠陥評価」、山口聡、中村大輔、郡司島造、広瀬美治、第2回SPring-8産業利用報告会 産業用専用ビームライン利用成果等報告、(2005). http://sunbeam.spring8.or.jp/top/seika/ohp/2005/O02.pdf
"Analysis of dislocation images in X-ray topography of protein crystals: tetragonal hen egg-white lysozyme crystals", H. Koizumi, M. Tachibana, I. Yoshizaki, K. Kojima, Philos. Mag. 85, 3709–3713 (2005).
"Identification of dislocations in large tetragonal hen egg-white lysozyme crystals by synchrotron white-beam topography", M. Tachibana, H. Koizumi, K. Izumi, K. Kajiwara and K. Kojima, J. Synchrotron Rad. 10, 416–420 (2003).
「放射光Ｘ線トポグラフィによるSiCウェーハの結晶完全性評価」、上村重明、工藤喜弘、上原康、三上朗、米山明男、田沼良平、大森廣文、広瀬美治、出口博史、野口真一、鎌田功穂、第16回日本放射光学会年会・放射光科学合同シンポジウム (2003). http://sunbeam.spring8.or.jp/top/seika/ohp/JSSR2002/10P37.pdf
「Ｘ線トポグラフィーによるS i C 単結晶成長その場観察装置の開発」、西澤伸一、山口博隆、加藤智久、小柳直樹、吉田貞史、荒井和雄、電子技術総合研究所彙報、63, 37-42 (1999). http://www.aist.go.jp/ETL/jp/results/bulletin/pdf/63-8to9/nishizawa72.pdf
「SiC単結晶成長のＸ線トポグラフィーその場観察装置の開発」、山口博隆、西澤伸一、荒井和雄、電総研ニュース、595, 2-5 (1999). http://www.aist.go.jp/ETL/jp/gen-info/news/etl-news/pdf/1999/08news72.pdf
