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"Forbidden X-ray diffraction of highly B doped diamond substrate", K. Kouda, Y. Sato, M. Takeuchi, H. Takahashi, and S. Shikata, Jpn. J. Appl. Phys. 60, 071002 (2021). https://doi.org/10.35848/1347-4065/ac0b23
"Vapor-liquid-solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt-Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors", N. Sanoodo, T. Kato, Y. Yonezawa, K. Kojima, and Y. Matsumoto, Cryst. Eng. Comm. 23, 5039 (2021). https://doi.org/10.1039/d1ce00625h
"Control of strain in subgrains of protein crystals by the introduction of grown-in dislocations", H. Koizumi, S. Uda, R. Suzuki, M. Tachibana, K. Kojima, K. Tsukamoto, I. Yoshizaki, S. Fukuyama and Y. Suzuki, Acta Cryst. D77, 599-605 (2021). https://doi.org/10.1107/S2059798321001820
"Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations", Q. Cheng, T. Ailihumaer, Y. Liu, H. Peng, Z. Chen, B. Raghothamachar and M. Dudley, J. Elect. Mater. 50, 4104-4117 (2021). https://doi.org/10.1007/s11664-021-08888-7
"Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC", F. Fujie, H. Peng, T. Ailihumaer, B. Raghothamachar, M. Dudley, S. Harada, M. Tagawa, T. Ujihara, Acta Materialia 208, 116746 (2021). https://doi.org/10.1016/j.actamat.2021.116746
"Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g.b=0 and g.b x l=0", H. Peng, T. Ailihumaer, F. Fujie, Z. Chen, B. Raghothamachar, and M. Dudley, J. Appl. Cryst. 54, 439-443 (2021).https://doi.org/10.1107/S160057672100025X
"Polycrystalline defects-origin of leakage current-in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography", S. Sdoeung, K. Sasaki, K. Kawasaki, J. Hirabayashi, A. Kuramata, and M. Kasu, Appl. Phys. Express 14, 036502 (2021). https://doi.org/10.35848/1882-0786/abde74
"Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method", E. Ohba, T. Kobayashi, T. Taishi. and K. Hoshikawa, J. Cryst. Growth 556, 125990 (2021). https://doi.org/10.1016/j.jcrysgro.2020.125990
"Identification of grown-in dislocations in protein crystals by digital X-ray topography", R. Suzuki, M. Abe, K. Kojima, and M. Tachibana, J. Appl. Cryst. 54, 163-168 (2021). https://doi.org/10.1107/S1600576720015356
"X-Ray Diffraction Topography Methods (Review)", V. V. Lider, Phys. Solid State 63, 189-214 (2021). https://doi.org/10.1134/S1063783421020141
"X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera", Y. Yao, Y. Sugawara, Y. Ishikawa, and K. Hirano, Jpn. J. Appl. Phys. 60, 010908 (2021). https://doi.org/10.35848/1347-4065/abd2dd
"Determining the three-dimensional atomic structure of an amorphous solid", Y. Yang, J. Zhou, F. Zhu, Y. Yuan, D. J. Chang, D. S. Kim, M. Pham, A. Rana, X. Tian, Y. Yao, S. J. Osher, A. K. Schmid, L. Hu, P. Ercius & J. Miao, Nature 59, 60-64 (2021). https://doi.org/10.1038/s41586-021-03354-0
"Electron ptychography achieves atomic-resolution limits set by lattice vibrations", Z. Chen, Y. Jiang, Y-T Shao, M. E. Holtz, M. Odstrcil,M. Guizar-Sicairos, I. Hanke, S. Ganschow, D. G. Schlom, D. A. Muller, Science 372, 826, (2021). https://doi.org/10.1126/science.abg2533
"Subsurface-damaged layer in (010)-oriented β-Ga2O3 substrates", H. Yamaguchi, S. Watanabe, Y. Yamaoka, K. Koshi, and A. Kuramata", Jpn. J. Appl. Phys. 59, 125503 (2020). https://doi.org/10.35848/1347-4065/abcb1c
"Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography", Y. Yao, Y. Ishikawa, and Y. Sugawara, Jpn. J. Appl. Phys. 59, 125501 (2020). https://doi.org/10.35848/1347-4065/abc1aa
"Twinning in Czochralski-Grown 36°-RY LiTaO3 Single Crystals", Y. Ohno, Y. Kubouchi,H. Yoshida,T. Kochiya, and T. Kajigaya, crystals 10, 1009 (2020). https://doi.org/10.3390/cryst10111009
"Influence of threading dislocations on diamond Schottky barrier diode characteristics", N. Akashi, N. Fujimaki, and S. Shikata, Diam. Relat. Mater. 109, 108024 (2020). https://doi.org/10.1016/j.diamond.2020.108024
"Dislocation classification of a large-area beta-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs", Y. Yao, Y. Ishikawa, and Y. Sugawara, J. Cryst. Grwoth 548, 125825 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125825
"Correlation between crystal warpage and swelling of 4H-SiC through implantation and annealing", K. Ishiji, K. Sato, T. Fujii, T. Araki, S. Mouri, and R. Sugie,Semicond. Sci. Technol. 35, 105008 (2020). https://doi.org/10.1088/1361-6641/ab9ecc
"50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air", K.Hoshikawa, T.Kobayashi, E.Ohba, and T.Kobayashi, J. Cryst. Growth 546, 125778 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125778
"Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography", N. Shinagawa, T. Izawa, M. Manabe, T. Yamochi, and N. Ohtani, Jpn. J. Appl. Phys. 59, 091002 (2020). https://doi.org/10.35848/1347-4065/abab46
"Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition", Y. Yao, Y. Tsusaka, Y. Ishikawa, Y. Sugawara, Y. Fujita, J. Matsui, N. Okada, and K. Tadatomo, Appl. Phys. Lett. 117, 092102 (2020). https://doi.org/10.1063/5.0015108
"Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography", F. Fujie, S. Harada, K.Hanada, H. Suo, H. Koizumi, T. Kato, M. Tagawa, T. Ujihara, Acta Mater. 194, 387-393 (2020). https://doi.org/10.1016/j.actamat.2020.04.019
"X-Ray Topography-More than Nice Pictures", Cryst. Res. Technol. 55, 2000012 (2020). https://doi.org/10.1002/crat.202000012
"Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy", S. Sdoeung, K. Sasaki, K. Kawasaki, J. Hirabayashi, A. Kuramata, T. Oishi, and M. Kasu, Appl. Phys. Lett. 117, 022106 (2020). https://doi.org/10.1063/5.0012794
"Evaluation of crystal quality of thin protein crystals based on the dynamical theory of X-ray diffraction", M. Abe, R. Suzuki, K. Kojima, and M. Tachibana, IUCrJ 7, 761-766 (2020). https://doi.org/10.1107/S2052252520007393
"Identification of Burgers vectors of dislocations in monoclinic beta-Ga2O3 via synchrotron x-ray topography", Y. Yao, Y. Sugawara, and Y. Ishikawa, J. Appl. Phys. 127, 205110 (2020). https://doi.org/10.1063/5.0007229
"Observation of dislocations in beta-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy", Y. Yao, Y. Sugawara, and Y. Ishikawa, Jpn. J. Appl. Phys. 59, 045502 (2020).
"Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale", Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada, and K. Tadatomo, J. Elect. Mater. 49, 5144-5153 (2020). https://doi.org/10.1007/s11664-020-08016-x
"Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer", S. Inotsume, N. Kokubo, H. Yamada, S. Onda, J. Kojima, J. Ohara, S. Harada, M. Tagawa, T. Ujihara, Phys. Status Solidi B 257, 1900527 (2020). https://doi.org/10.1002/pssb.201900527
"Transmission behavior of dislocations against Σ3 twin boundaries in Si", I. Yonenaga and K. Kutsukake, J. Appl. Phys. 127, 075107 (2020). https://doi.org/10.1063/1.5139972
"Evaluation of diamond mosaic wafer crystallinity by electron diffraction backscatter", A. Matsushita, N. Fujimori, Y. Tsuchida, N. Ohtani, D. Dojima, K. Koide, T. Kaneko, and S. Shikata, Diam. Relat. Mater. 101, 107558 (2020). https://doi.org/10.1016/j.diamond.2019.107558
"Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method", A. Tanaka, S. Inotsume, S. Harada, K. Hanada, Y. Honda, T. Ujihara, and H. Amano, Phys. Solid State b 257, 1900553 (2020). https://doi.org/10.1002/pssb.201900553
"High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity", S. Yamaguchi, N. Naganawa. and M. Nakamura, Jpn. J. Appl. Phys. 58, 060901 (2019). https://doi.org/10.7567/1347-4065/ab1a53
"Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography", M. Kanechika, S. Yamaguchi, M. Imanishi, and Y. Mori, Jpn. J. Appl. Phys. 58, SCCD22 (2019). https://doi.org/10.7567/1347-4065/ab0f19
"Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC", Y. Tokuda, I. Kamata, N. Hoshino, and H. Tsuchida, Jpn. J. Appl. Phys. 58, 121005 (2019). https://doi.org/10.7567/1347-4065/ab4fac
"Development of an X-ray imaging detector to resolve 200 nm line-and-space patterns by using transparent ceramics layers bonded by solid-state diffusion", T. Kameshima, A. Takeuchi, K. Uesugi, T. Kudo, Y. Kohmura, K. Tamasaku, K. Muramatsu, T. Yanagitani, M. Yabashi, and T. Hatsui, Opt. Lett. 44, 1403-1406 (2019). https://doi.org/10.1364/OL.44.001403
"X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition", I. Kamata, Y. Tsusaka, R. Tanuma, and J. Matsui, Jpn. J. Appl. Phys. 57, 090314 (2018). https://doi.org/10.7567/JJAP.57.090314
"Advancement of x-ray radiography using microfocus x-ray source in conjunction with amplitude grating and SOI pixel detector, SOPHIAS", R. Hosono, T. Kawabata, K. Hayashida, T. Kudo, K. Ozaki, N. Teranishi, T. Hatsui, T. Hosoi, H. Watanabe, and T. Shimura, Opt. Express 26, 21044-21053 (2018). https://doi.org/10.1364/OE.26.021044
"Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation", F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, and T. Ujihara, Appl. Phys. Lett. 113, 012101 (2018). https://doi.org/10.1063/1.5038189
"Deciphering chemical order/disorder and materia properties at the single-atom level", Y. Yang, C-C Chen, M. C. Scott, C. Ophus, R. Xu, A. Pryor Jr., L. Wu, F. Sun, W. Theis, J. Zhou, M. Eisenbach, P. R. C. Kent, R. F. Sabirianov, H. Zeng, P. Ercius, and J. Miao, Nature 542, 75-79 (2017). http://dx.doi.org/10.1038/nature21042
"High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography", S. O. Hruszkewycz, M. Allain, M. V. Holt, C. E. Murray, J. R. Holt, P. H. Fuoss & V. Chamard, Nature Mater. 16, 244-251(2017). https://doi.org/10.1038/nmat4798
"X-ray topography using the forward transmitted beam under multiple-beam diffraction conditions", Y. Tsusaka, S. Takeda, H. Takano, K. Yokoyama, Y. Kagoshima, and J. Matsui, Rev. Sci. Instrum. 87, 023701 (2016). https://doi.org/10.1063/1.4940443
"Slip system analysis and X-ray topographic study on β-Ga2O3", H. Yamaguchi, A. Kuramata, and T. Masui, Superlattices and Microstructures 99, 99-103 (2016). https://doi.org/10.1016/j.spmi.2016.04.030
"Formation of helical dislocations in ammonothermal GaN substrate by heat treatment", K. Horibuchi, S. Yamaguchi, Y. Kimoto, K. Nishikawa, and T. Kachi, Semicond. Sci. Technolo. 31, 034002 (2016). http://dx.doi.org/10.1088/0268-1242/31/3/034002
"X-ray topography using the forward transmitted beam under multiple-beam diffraction conditions", Y. Tsusaka, S. Takeda, H. Takano, K. Yokoyama, Y. Kagoshima, and J. Matsui, Rev. Sci. Instrum. 87, 023701 (2016). http://dx.doi.org/10.1063/1.4940443
"Development of a compact compression test stage for synchrotron radiation micro-Laue diffraction measurements of long-period stacking-ordered phases in Mg-Zn-Y alloys", Shigeru Kimura, Kentaro Kajiwara, and Takayoshi Shimura, Jpn. J. Appl. Phys. 55, 038002 (2016). http://doi.org/10.7567/JJAP.55.038002
"Grain rotation and lattice deformation during photoinduced chemical reactions revealed by in situ X-ray nanodiffraction", Zhifeng Huang, Matthias Bartels, Rui Xu, Markus Osterhoff, Sebastian Kalbfleisch, Michael Sprung, Akihiro Suzuki, Yukio Takahashi, Thomas N. Blanton, Tim Salditt & Jianwei Miao, Nature Materials 14, 691–695 (2015). doi:10.1038/nmat4311 http://www.nature.com/nmat/journal/v14/n7/full/nmat4311.html
"Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals", N. Ohtani, C. Ohshige, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, W. Ohashi, T. Yano, H. Matsuhata, M. Kitabatake, J. of Cryst. Growth 386, 9 (2014). http://www.sciencedirect.com/science/article/pii/S0022024813006271
"Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg-Barrett X-ray topography", H. Matsuhataab, H. Yamaguchi, T. Yamashita, T. Tanaka, B. Chen & T. Sekiguchi, Philos. Mag. 94, 1674 (2014). http://www.tandfonline.com/doi/abs/10.1080/14786435.2014.894646#.U9eKiuN_t8F
"The dissociation modes of threading screw dislocations in 4H-SiC", S. Onda, H. Watanabe, Y. Kitou, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi & H. Saka, Philos. Mag. 93, 591 (2014). http://www.tandfonline.com/doi/abs/10.1080/09500839.2013.826395?src=recsys#.U9eLAuN_t8E
"The energy of dislocation dipoles", G. Schoeck, Philos. Mag. 94, 1542 (2014). http://www.tandfonline.com/doi/abs/10.1080/14786435.2014.889327?src=recsys#.U9eLy-N_t8E
"Synchrotron Diffraction Topography in Studying of the Defect Structure in Crystals Grown by the Czochralski Method", W. Wierzchowski, K. Wieteska, A. Malinowska, E. Wierzbicka, M. Lefeld-Sosnowska, M. Swirkowicz, T. Lukasiewicz, A. Pajaczkowska, C. Paulmann, Acta Phys. Polonica A 124, 350 (2013). http://przyrbwn.icm.edu.pl/APP/ABSTR/124/a124-2-26.html
"Contrast in transmission X-ray diffraction topographs of growth defects in the core of SrLaGaO4 single crystals", A. Malinowska, M. Lefeld-Sosnowska and J. Hartwig, J. Appl. Cryst. 46, 48 (2013). http://scripts.iucr.org/cgi-bin/paper?S0021889812050522
"Evolution of threading screw dislocation conversion during solution growth of 4H-SiC", S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara, APL Mat. 1, 022109 (2013). http://scitation.aip.org/content/aip/journal/aplmater/1/2/10.1063/1.4818357
"Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching", H. Wang, S. Sun, M. Dudley, S. Byrappa, F. Wu, B. Raghothamachar, G. Chung, E. K. Sanchez, S. G. Mueller, D. Hansen, and M. J. Loboda, J. of Elect. Mater. 42, 794 (2013). http://link.springer.com/article/10.1007%2Fs11664-013-2527-x
"Three-dimensional imaging of dislocations in a nanoparticle at atomic resolution", Chien-Chun Chen, Chun Zhu, Edward R. White, Chin-Yi Chiu, M. C. Scott, B. C. Regan, Laurence D. Marks, Yu Huang, and Jianwei Miao, Nature 496, 74-77 (2013).
"Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography", H. Jussila, S. Nagarajan, S. Sintonen, S. Suihkonen, A. Lankinen, T. Huhtio, C. Paulmann, H. Lipsanen, T.O. Tuomi, M. Sopanen, Thin Solid Films 534, 680 (2013). http://www.sciencedirect.com/science/article/pii/S0040609013003039
"In vivo physiological saline-infused hepatic vessel imaging using a two-crystal-interferometer-based phase-contrast X-ray technique", T. Takeda, A. Yoneyama, J. Wu, T-T-Lwin, A. Momose, and K. Hyodo, J. Synchrotron Radiat.19, 252-256 (2012).
日本結晶学会誌 第 54 巻 第 1号 特集 ：「Ⅹ線トポグラフィの進展」
目次はこちらに掲載されています。
上記の特集号中の「放射光X線トポグラフィの進展」(川戸清爾)で集計に用いられた論文のリストは
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です。
"Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing", K. Ishiji, R. Ohtani, S. Kawado, Y. Hirai, and S. Nagamachi,Semicond. Sci. Technol. 26, 025009 (2011).
"Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography", H. Yamaguchi and H. Matsuhata, J. Electron. Mater. 39,715 (2010).
"Structural Characterization of Doped GaSb? Single Crystals by X-ray Topography", M. G. Hönnicke, I. Mazzaro, J. Manica, E. Benine, E. M. da Costa, B. A. Dedavid, C. Cusatis and X. R. Huang, J. Electron. Mater. 39,727 (2010).
"X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe?(211) and Its Comparison with Epitaxially Grown CdTe? Buffer Layers on Si and Ge Substrates", J. K. Markunas, L. A. Almeida, R. N. Jacobs, J. Pellegrino, S. B. Qadri, N. Mahadik and J. Sanghera, J. Electron. Mater. 39,738 (2010).
"Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals", Y. Zhang, H. Chen, G. Choi, B. Raghothamachar, M. Dudley, J. H. Edgar, K. Grasza, E. Tymicki, L. Zhang and D. Su, J. Electron. Mater. 39,799 (2010).
"Synchrotron X-Ray Topography Study of Structural Defects and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance", B. Raghothamachar, J.J. Carvajal, M.C. Pujol, X. Mateos, R. Solé, M. Aguiló, F. Díaz and M. Dudley, J. Electron. Mater. 39,823 (2010).
"Phase modulation effects in X-ray diffraction from a highly deformed crystal with variable strain gradient", M. Shevchenko, Acta Cryst. A65, 352-359 (2009).
「X線トポグラフィ研究会の現状報告」、飯田 敏、志村考功、梶原健太郎、SPring-8利用者情報, 13, 50-55 (2008).
"Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices", T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida and H. Watanabe, ECS Transactions 13, 75-82 (2008).
"Characterization of Strained Si Wafers by X-ray Diffraction Techniques", T. Shimura, K. Kawamura, M. Asakawa, H. Watanabe, K. Yasutake, A. Ogura, K. Fukuda, O. Sakata, S. Kimura, H. Edo, S. Iida and M. Umeno, J. Mater. Sci.: Mater. Electron. 19 189-193 (2008).
"Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography", T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura and H. Watanabe, ECS Transactions 16, 539-543 (2008).
"White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers" K. Fukuda, T. Yoshida, T. Shimura, K. Yasutake, M. Umeno, and S. Iida, Jpn. J. Appl. Phys. 45, 6795-6799 (2006).
「タンパク質単結晶の放射光白色Ｘ線トポグラフィ」、橘 勝、小泉晴比呂、小島謙一、PF News 22-1, 17-23 (2006). http://pfwww.kek.jp/publications/pfnews/22_1/p17-23.pdf
「超高品質SiC単結晶のトポグラフを用いた欠陥評価」、山口聡、中村大輔、郡司島造、広瀬美治、第2回SPring-8産業利用報告会 産業用専用ビームライン利用成果等報告、(2005). http://sunbeam.spring8.or.jp/top/seika/ohp/2005/O02.pdf
"Analysis of dislocation images in X-ray topography of protein crystals: tetragonal hen egg-white lysozyme crystals", H. Koizumi, M. Tachibana, I. Yoshizaki, K. Kojima, Philos. Mag. 85, 3709–3713 (2005).
"Identification of dislocations in large tetragonal hen egg-white lysozyme crystals by synchrotron white-beam topography", M. Tachibana, H. Koizumi, K. Izumi, K. Kajiwara and K. Kojima, J. Synchrotron Rad. 10, 416–420 (2003).
「放射光Ｘ線トポグラフィによるSiCウェーハの結晶完全性評価」、上村重明、工藤喜弘、上原康、三上朗、米山明男、田沼良平、大森廣文、広瀬美治、出口博史、野口真一、鎌田功穂、第16回日本放射光学会年会・放射光科学合同シンポジウム (2003). http://sunbeam.spring8.or.jp/top/seika/ohp/JSSR2002/10P37.pdf
「Ｘ線トポグラフィーによるS i C 単結晶成長その場観察装置の開発」、西澤伸一、山口博隆、加藤智久、小柳直樹、吉田貞史、荒井和雄、電子技術総合研究所彙報、63, 37-42 (1999). http://www.aist.go.jp/ETL/jp/results/bulletin/pdf/63-8to9/nishizawa72.pdf
「SiC単結晶成長のＸ線トポグラフィーその場観察装置の開発」、山口博隆、西澤伸一、荒井和雄、電総研ニュース、595, 2-5 (1999). http://www.aist.go.jp/ETL/jp/gen-info/news/etl-news/pdf/1999/08news72.pdf
